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High-speed monolithically integrated silicon photoreceivers fabricated in 130-nm CMOS technology

Autor: Joe C. Campbell, J.D. Schaub, R. Shimer, Sebastian Csutak, W.E. Wu

Publikováno v: Journal of Lightwave Technology. 20:1724-1729

A complementary metal-oxide-semiconductor (CMOS) monolithically integrated photoreceiver is presented. The circuit was fabricated in a 130-nm unmodified CMOS process flow on 2-/spl mu/m-thick silicon-on-insulator substrates. The receiver operated at

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e197db09001b2d54b3572309836ba0c9
https://doi.org/10.1109/jlt.2002.802221

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CMOS-compatible high-speed planar silicon photodiodes fabricated on SOI substrates

Autor: Sebastian Csutak, W.E. Wu, R. Shimer, Jeremy D. Schaub, Joe C. Campbell

Publikováno v: IEEE Journal of Quantum Electronics. 38:193-196

We report high-speed planar silicon p-i-n photodiodes fabricated on silicon-on-insulator (SOI) substrates. The devices were fabricated in standard CMOS technology with no additional fabrication steps required. The 250-nm finger-spacing devices exhibi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::050ace181fc65701f5a2308a9b5f5a53
https://doi.org/10.1109/3.980272

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Inverted T channel FET (ITFET) - Fabrication and characteristics of vertical-horizontal, thin body, multi-gate, multi-orientation devices, ITFET SRAM bit-cell operation. A novel technology for 45nm and beyond CMOS

Publikováno v: IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

In this paper we demonstrate for the first time a novel CMOS IT-FET (inverted T channel FET) architecture. We demonstrate well functional ITFET SRAM bit-cells. Vertical devices such as FinFET and planar ultra thin body devices have been shown to exhi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0d8b5c6294636148e63fcac464110237
https://doi.org/10.1109/iedm.2005.1609452

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Multiple independent gate field effect transistor (MIGFET) - multi-fin RF mixer architecture, three independent gates (MIGFET-T) operation and temperature characteristics

Publikováno v: Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005..

MIGFET devices have multiple gates to independently control the channel region. This allows for new device architectures and applications. This paper deals with three novel aspects discussed the first time I) Multi-fin MIGFET device with two independ

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8d24c62c5b2ff6efa718f0e1a2818e6f
https://doi.org/10.1109/.2005.1469267

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Multi gated device architectures advances, advantages and challenges

Autor: A. Vandooren, R. Shimer, Bruce E. White, Bich-Yen Nguyen, R. Mora, Michael A. Sadd, S. Jallepalli, J. Hughes, S. Kalpai, D. Sing, Yang Du, G. Workman, A. Mogab, Raghav Rai, Tab A. Stephens, Colita Parker, M. Zavala, Aaron Thean, Leo Mathew

Publikováno v: 2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866).

Device architectures incorporating multiple gate structures have been proposed to allow transistor scaling beyond the planar MCSFET integrations. These device architectures can improve performance such as better short channel performance and reduced

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::99ac145f7ce4fcae65b1bbbd8485a55a
https://doi.org/10.1109/icicdt.2004.1309916

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Reverse antenna effect due to process-induced quasi-breakdown of gate oxide

Autor: R. Shimer, J.F. Chen, C. Gelatos, P. Tobin, Chenming Hu

Publikováno v: 1996 International Integrated Reliability Workshop Final Report.

It was found that wafer charging during processing can cause the quasi-breakdown of gate oxide and lead to more than four orders of magnitude increase in gate leakage current. Gate oxides that have experienced this quasi-breakdown display minimal tra

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5ed8fcf839b961a10ffd11d66e08fb85
https://doi.org/10.1109/irws.1996.583391

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