Zobrazeno 1 - 10
of 11
pro vyhledávání: '"R. Scott Kern"'
Autor:
J. P. Barnak, Robert F. Davis, Robert J. Nemanich, Sean W. King, R. Scott Kern, M. C. Benjamin
Publikováno v:
Journal of The Electrochemical Society. 146:3448-3454
The techniques (temperature range of study) of in situ thermal desorption (500-1100°C) and chemical vapor cleaning (CVC) via exposure to SiH 4 and/or C 2 H 4 (750-1100°C) have been investigated for preparing 6H SiC [(0001) Si , (0001) C , (1120), a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ecbbbfc8a716756701bb504296465d98
https://doi.org/10.1149/1.1392494
https://doi.org/10.1149/1.1392494
Autor:
Robert M Fletcher, Heng Liu, Werner Götz, Daniel A. Steigerwald, R. Scott Kern, Serge L Rudaz
Publikováno v:
JOM. 49:18-23
Most of the rapid developments in (AlIn)GaN alloy system technology have occurred within the past few years, and the technology is still moving at a fast pace. New performance records for light-emitting diodes and laser diodes are constantly being re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb36c3f78ff9209e6c80af32b1ea92c8
https://doi.org/10.1007/bf02914345
https://doi.org/10.1007/bf02914345
Publikováno v:
Journal of Crystal Growth. 163:93-99
The effect of gas flow ratios ( C 2 H 4 Si 2 H 6 = 1,2,10 ) on the growth mode of SiC thin films on vicinal α(6H)-SiC(0001) substrates by gas-source molecular beam epitaxy (GSMBE) at 950–1150°C has been investigated. Step flow, step bunching and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e97449ce1c362498af2071f703391f97
https://doi.org/10.1016/0022-0248(95)01052-1
https://doi.org/10.1016/0022-0248(95)01052-1
Publikováno v:
Surface Science. 350:247-253
Surfaces of 6H-SiC(0001) homoepitaxial layers deposited on vicinal (∼3.5° off (0001) towards [1120]) and on-axis 6HSiC wafers by chemical vapour deposition have been investigated using ultra-high vacuum scanning tunneling microscopy. Undulating
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f729ad39a9c8d413c890151e0ae09cee
https://doi.org/10.1016/0039-6028(95)01105-6
https://doi.org/10.1016/0039-6028(95)01105-6
Autor:
R. Scott Kern
Publikováno v:
SAE Technical Paper Series.
Innovative LED lighting solutions have become more prevalent in automotive signal lighting during the past few years. However, to date, there has been no penetration into the various forward lighting applications. This is primarily due to significant
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::25aeb2c874bb61fca4bed2e7b8b0cbdc
https://doi.org/10.4271/2004-01-0225
https://doi.org/10.4271/2004-01-0225
Publikováno v:
Applied Physics Letters. 66:37-39
The initial stage of AlN film growth on 6H‐SiC(0001) substrates by plasma‐assisted, gas source molecular beam epitaxy (PAGSMBE) has been investigated in terms of growth mode and interface defects. Cross‐sectional high resolution transmission el
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e9cdb7fce131b43a599a3e867ad4cd36
https://doi.org/10.1063/1.114173
https://doi.org/10.1063/1.114173
Publikováno v:
Applied Physics Letters. 65:2851-2853
Silicon carbide thin films have been grown on vicinal 6H‐SiC(0001) substrates by gas‐source molecular beam epitaxy at 1050 °C. The effect of gas flow ratios (C2H4Si2H6=1,2,10) on the growth mode was examined via cross‐sectional high resolution
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::95a7f2bb72302cb2792926e651c545b4
https://doi.org/10.1063/1.112513
https://doi.org/10.1063/1.112513
Autor:
M. G. Craford, M. J. Ludowise, Mira S. Misra, Yu-Chen Shen, G. Christenson, J. O'Shea, Werner Goetz, Nathan F. Gardner, Michael R. Krames, Paul S. Martin, Chien-Hua Chen, Jerome Chandra Bhat, Andrew Y. Kim, R Scott Kern, Frank M. Steranka, Richard Mann, Jonathan J. Wierer, Jingxi Yu, Serge L. Rudaz, Reena Khare, S. Subramanya, Lou W. Cook, Dan A. Steigerwald, S. A. Stockman
Publikováno v:
SPIE Proceedings.
High-power light-emitting diodes (LEDs) in both the AlInGaP (red to amber) and the AlGaInN (blue-green) material systems are now commercially available. These high-power LEDs enable applications wherein high flux is necessary, opening up new markets
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b23c2143f05ae41fb76e76892fe698ad
https://doi.org/10.1117/12.426841
https://doi.org/10.1117/12.426841
Autor:
Christopher H. Lowery, Serge L Rudaz, Richard Mann, Richard P. Schneider, Werner Goetz, Michael R. Krames, Eric Scott Johnson, Ying-Lan Chang, Lou W. Cook, T. Takeuchi, M. Heuschen, Ghulam Hasnain, Dan A. Steigerwald, Tun S. Tan, John F. Thompson, G. Christenson, Christophe P. Kocot, R Scott Kern, M. J. Ludowise, Paul S. Martin, William R. Imler, Nathan F. Gardner, J. O'Shea, M. Maranowski, Frederick A. Kish, David Paul Basile, Jeffrey N. Miller, Gerd O. Mueller, Regina Mueller-Mach, Jingxi Yu, D. Collins, S. Jeffrey Rosner, Steven D. Lester, Jonathan J. Wierer, Reena Khare, Robert M Fletcher, Alice Edwards, M. G. Craford, Kevin Killeen, Steven A Maranowski
Publikováno v:
SPIE Proceedings.
Currently, commercial LEDs based on AlGaInN emit light efficiently from the ultraviolet-blue to the green portion of the visible wavelength spectrum. Data are presented on AlGaInN LEDs grown by organometallic vapor phase epitaxy (OMVPE). Designs for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1e1d37aed6e7815238dea53a3d891141
https://doi.org/10.1117/12.382822
https://doi.org/10.1117/12.382822
Autor:
R Scott Kern
Publikováno v:
SPIE Proceedings.
The light emitting diode (LED) is the dominant type of compound semiconductor device in terms of the epitaxial area of material produced as well as the number of devices fabricated and sold. Recent breakthroughs have resulted in dramatic performance
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::79c690f75f68dbd25d4f31653a25f96f
https://doi.org/10.1117/12.344472
https://doi.org/10.1117/12.344472