Zobrazeno 1 - 10
of 98
pro vyhledávání: '"R. Schwertberger"'
Autor:
Robert Kudrawiec, Jan Misiewicz, R. Schwertberger, Grzegorz Sęk, Andre Somers, Alfred Forchel, W. Rudno-Rudziński, Johann Peter Reithmaier
Publikováno v:
physica status solidi c. 3:3852-3855
Photoreflectance (PR) and photoluminescence measurements have been performed on molecular beam epitaxy grown InAs quantum dashes (QDash) of various sizes, embedded in In0.53Ga0.47As/In0.53Ga0.23Al0.24As quantum well (QW), grown on InP substrate. PR r
Autor:
Gadi Eisenstein, R. Schwertberger, Vissarion Mikhelashvili, R. Alizon, Michel Krakowski, Michel Calligaro, Andre Somers, A. Bilenca, Shailendra Bansropun, Johann Peter Reithmaier, Hanan Dery, Alfred Forchel, D. Hadass
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 11:1015-1026
We present a theoretical model for gain and noise saturation in quantum dash (QDash) semiconductor optical amplifiers. The model is based on the density matrix formalism and addresses static saturation spectra. The calculations are confirmed by a ser
Autor:
S. Deubert, W. Kaiser, Alfred Forchel, Johann Peter Reithmaier, Andre Somers, R. Schwertberger
Publikováno v:
Journal of Crystal Growth. 278:346-350
Self-assembled quantum dash (QDash) lasers based on InP with an emission wavelength of about 1.5 μm were grown by molecular beam epitaxy with solid-state sources. Two different approaches were investigated to further extend the broad gain bandwidth
Autor:
Johann Peter Reithmaier, Alfred R. Adams, Stephen J. Sweeney, Alfred Forchel, Igor P. Marko, Andre Somers, B. N. Murdin, S. R. Jin, R. Schwertberger
Publikováno v:
physica status solidi (b). 241:3427-3431
Two types of InAs quantum dash lasers grown on InP substrates with lasing wavelengths of 1.52 pm and 1.76 μm were studied. In both laser types the threshold current density, J th , was about 2 kA/cm 2 at room temperature and had a similar temperatur
Autor:
L. Worschech, S. Kaiser, Alfred Forchel, J.P. Reithmaier, Y. Ling, T. Mensing, R. Schwertberger
Publikováno v:
physica status solidi (c). :1161-1164
Self assembled InAs quantum dashes were grown by molecular beam epitaxy on In0.53Ga0.23Al0.24As lattice matched to InP. Using electron beam lithography and wet etching single dash structures were isolated for spectroscopic studies. At low temperature
Publikováno v:
Journal of Crystal Growth. 251:248-252
Self-assembled InAs quantum dashes in the InP system were grown by gas source molecular beam epitaxy. Different growth parameters like buffer material, growth temperature and layer thickness were studied using scanning electron microscopy and photolu
Publikováno v:
Surface and Coatings Technology. :286-291
Nitrogen ion beam assisted deposition of thin gallium nitride (GaN) films on c-plane sapphire was performed to examine the influence of hyperthermal ion irradiation on the growth and the structural properties of the films. Therefore, the ion-to-atom
Autor:
W. Rudno-Rudziński, Marcin Motyka, Grzegorz Sęk, Robert Kudrawiec, Andre Somers, R. Schwertberger, Alfred Forchel, Johann Peter Reithmaier, Jan Misiewicz
Publikováno v:
physica status solidi c. 4:350-352
Photoreflectance (PR) and contactless electroreflectance (CER) spectroscopies have been used to study optical transitions in an InP-based laser structure emitted at 1.55 μm with the active region including InAs quantum dashes (QDashes). Optical tran
Spectrally resolved dynamics of inhomogeneously broadened gain in InAs∕InP1550nm quantum-dash lasers
Autor:
Hanan Dery, Gadi Eisenstein, Alfred Forchel, Vissarion Mikhelashvili, R. Schwertberger, Michel Krakowski, Johann Peter Reithmaier, D. Hadass, Andre Somers, Michel Calligaro, Shailendra Bansropun, R. Alizon
Publikováno v:
Applied Physics Letters. 85:5505-5507
We report spectrally resolved dynamical properties of 1550nm quantum-dash lasers. The dynamics are governed by the inhomogeneous broadening of the gain medium and by wavelength-dependent carrier capture and escape rates.
Autor:
Johann Peter Reithmaier, Hanan Dery, Gadi Eisenstein, D. Gold, Alfred Forchel, Vissarion Mikhelashvili, R. Alizon, R. Schwertberger, A. Bilenca
Publikováno v:
Applied Physics Letters. 82:4660-4662
Dynamical properties of cross-gain modulation (XGM) within the inhomogeneously broadened gain spectrum of an InP quantum dash optical amplifier operating at 1550 nm are examined. The small-signal XGM modulation bandwidth increases with the carrier es