Zobrazeno 1 - 10
of 39
pro vyhledávání: '"R. Sarfaty"'
Publikováno v:
Physical Review B. 47:9492-9500
We assume that Al x Ga 1-x As layers may be classified into two general groups of different configurations: one consisting of mesoscopic-size clusters differing in their cation content, but otherwise fairly homogeneous (I), while in the other the cat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a11608e85750fcc8899fd40dea12916
https://doi.org/10.1103/physrevb.47.9492
https://doi.org/10.1103/physrevb.47.9492
Publikováno v:
Journal of Applied Physics. 71:1744-1747
We find that in a highly lattice‐mismatched heteroepitaxial growth, as critical thickness is reached, defects are formed within a thin layer at the surface and do not necessarily propagate to the interface. At that thin layer the strain is locally
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f416892575900017bdf6f6ba448d2c76
https://doi.org/10.1063/1.351207
https://doi.org/10.1063/1.351207
Publikováno v:
Applied Physics Letters. 68:2043-2045
It is demonstrated that placing an n‐type Te δ doping aside a single strained quantum well (QW) is an efficient way to control the initial carrier concentration in the QW and thus to lower transparency current density, Jtr, while preserving low in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ffb6b3f3edfc8b59e7e98bf68dc73982
https://doi.org/10.1063/1.116297
https://doi.org/10.1063/1.116297
Publikováno v:
Semiconductor Science and Technology. 11:568-570
A , strained InGaAs quantum well laser, reaching a record high power of 31 W at 50 A in 230 ns pulsed operation, is reported. The new structure is based on a wide asymmetric multimode optical waveguide that reduces the optical power density on the la
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ded20ba3914994ab4fea8cb868a4670b
https://doi.org/10.1088/0268-1242/11/4/018
https://doi.org/10.1088/0268-1242/11/4/018
Publikováno v:
Conference Digest. 15th IEEE International Semiconductor Laser Conference.
By using a combination of a single strained quantum well with a n-type /spl delta/-doped layer, the transparency current density of the laser was lowered. It was achieved without increasing the internal losses, in contrast with a uniformly doped acti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::35ac607ea2d12d56aeea76a59a074218
https://doi.org/10.1109/islc.1996.553740
https://doi.org/10.1109/islc.1996.553740
Publikováno v:
Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society.
Improved dynamic properties of strained single quantum well (QW) laser are obtained by adding an n-type /spl delta/-doping to the active layer. The increased modulation bandwidth is attributed to the enhancement of capture in the QW. The design was p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::207140027c5345f86e4660802ba273ec
https://doi.org/10.1109/leos.1996.571950
https://doi.org/10.1109/leos.1996.571950
Publikováno v:
Applied Physics Letters. 59:3219-3221
In this work we study the effect of strain on the performance of highly strained InxGa1−xAs/GaAs/GaAlAs quantum well lasers (SQWL). We changed the indium concentration and the QW width and found that the threshold current density, Jth, is minimal w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::20fdd2d771db137ea6ed627d4b099530
https://doi.org/10.1063/1.105737
https://doi.org/10.1063/1.105737
Publikováno v:
Applied Physics Letters. 58:400-402
Relaxation of strain in InxGa1−xAs layers on GaAs is studied by Raman spectroscopy for layers below and above the critical thickness. We show that the enormous strain of the perfect epitaxial layer is released stepwise with the thickness. It is sug
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a87d0b882baf8de6aafb4ea2a2fbe42
https://doi.org/10.1063/1.104647
https://doi.org/10.1063/1.104647
Publikováno v:
Journal of Applied Physics. 59:780-786
The stimulated emission spectra of photoexcited AlxGa1−xAs, 0.42≤x≤0.46 (near the direct‐indirect gap crossover xc =0.435) were measured at low temperatures as a function of the illuminated stripe length and excitation intensity. Based on the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::905c29c9815009fce1a27e1b340fc2b0
https://doi.org/10.1063/1.336598
https://doi.org/10.1063/1.336598
Publikováno v:
Journal of Applied Physics. 63:966-968
In mixed III‐V semiconductors, AB1−xCx, the atoms are supposed to be randomly distributed. Using resonant Raman scattering as a probe, we determined the departure from a random distribution inside small volumes of the order of V≂(50 A)3. It has
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a79840e8b941d10761404fedd4f259d
https://doi.org/10.1063/1.340043
https://doi.org/10.1063/1.340043