Zobrazeno 1 - 10
of 205
pro vyhledávání: '"R. Sarfaty"'
Publikováno v:
Physical Review B. 47:9492-9500
We assume that Al x Ga 1-x As layers may be classified into two general groups of different configurations: one consisting of mesoscopic-size clusters differing in their cation content, but otherwise fairly homogeneous (I), while in the other the cat
Publikováno v:
Journal of Applied Physics. 71:1744-1747
We find that in a highly lattice‐mismatched heteroepitaxial growth, as critical thickness is reached, defects are formed within a thin layer at the surface and do not necessarily propagate to the interface. At that thin layer the strain is locally
Publikováno v:
Applied Physics Letters. 68:2043-2045
It is demonstrated that placing an n‐type Te δ doping aside a single strained quantum well (QW) is an efficient way to control the initial carrier concentration in the QW and thus to lower transparency current density, Jtr, while preserving low in
Publikováno v:
Semiconductor Science and Technology. 11:568-570
A , strained InGaAs quantum well laser, reaching a record high power of 31 W at 50 A in 230 ns pulsed operation, is reported. The new structure is based on a wide asymmetric multimode optical waveguide that reduces the optical power density on the la
Publikováno v:
Conference Digest. 15th IEEE International Semiconductor Laser Conference.
By using a combination of a single strained quantum well with a n-type /spl delta/-doped layer, the transparency current density of the laser was lowered. It was achieved without increasing the internal losses, in contrast with a uniformly doped acti
Publikováno v:
Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society.
Improved dynamic properties of strained single quantum well (QW) laser are obtained by adding an n-type /spl delta/-doping to the active layer. The increased modulation bandwidth is attributed to the enhancement of capture in the QW. The design was p
Publikováno v:
Applied Physics Letters. 59:3219-3221
In this work we study the effect of strain on the performance of highly strained InxGa1−xAs/GaAs/GaAlAs quantum well lasers (SQWL). We changed the indium concentration and the QW width and found that the threshold current density, Jth, is minimal w
Publikováno v:
Applied Physics Letters. 58:400-402
Relaxation of strain in InxGa1−xAs layers on GaAs is studied by Raman spectroscopy for layers below and above the critical thickness. We show that the enormous strain of the perfect epitaxial layer is released stepwise with the thickness. It is sug
Autor:
Spertino, Matteo1 (AUTHOR) matteo.spertino@humanitas.it, Gabbiadini, Roberto2 (AUTHOR) roberto.gabbiadini@humanitas.it, Dal Buono, Arianna2 (AUTHOR) arianna.dalbuono@humanitas.it, Busacca, Anita2 (AUTHOR) anita.busacca@humanitas.it, Franchellucci, Gianluca1 (AUTHOR) gianluca.franchellucci@humanitas.it, Migliorisi, Giulia1 (AUTHOR) giulia.migliorisi@humanitas.it, Repici, Alessandro1,3 (AUTHOR) alessandro.repici@hunimed.eu, Spinelli, Antonino1,4 (AUTHOR) antonino.spinelli@hunimed.eu, Bezzio, Cristina1,2 (AUTHOR) cristina.bezzio@hunimed.eu, Armuzzi, Alessandro1,2 (AUTHOR) alessandro.armuzzi@hunimed.eu
Publikováno v:
Journal of Clinical Medicine. Apr2024, Vol. 13 Issue 8, p2300. 26p.
Autor:
Dutt, Hanna1,2 (AUTHOR), Dean, Arleigh1,2 (AUTHOR), Kamal, Rayyan Syed1,2 (AUTHOR), Allan, Alison L.1,3 (AUTHOR) alison.allan@lhsc.on.ca
Publikováno v:
Journal of Medical Education & Curricular Development. 12/17/2023, p1-11. 11p.