Zobrazeno 1 - 10
of 121
pro vyhledávání: '"R. S. Sillmon"'
Publikováno v:
Journal of Applied Physics. 72:4954-4957
This article reports on amorphous (α) nonalloyed TiWSix ohmic contacts on n‐GaAs using an intervening graded‐band‐gap layer of InxGa1−xAs grown by the low pressure organometallic chemical vapor deposition method. The metal silicide contacts
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::724069b70adf26d17ca5b4c563707286
https://doi.org/10.1063/1.352064
https://doi.org/10.1063/1.352064
Autor:
Thomas A. Kennedy, Masashi Mizuta, Michael G. Spencer, Thomas F. Kuech, R. S. Sillmon, Evan R. Glaser, B. Molnar
Publikováno v:
Physical Review B. 43:14540-14556
Optically detected magnetic-resonance (ODMR) experiments have been performed on n-doped epitaxial layers of AlAs and ${\mathrm{Al}}_{\mathit{x}}$${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$As with x\ensuremath{\ge}0.35 grown on (001) GaAs sub
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a762ee887688119d4a7cc803146b4fe
https://doi.org/10.1103/physrevb.43.14540
https://doi.org/10.1103/physrevb.43.14540
Autor:
Ali Badakhshan, Phillip E. Thompson, Kambiz Alavi, Robert Glosser, Mark Anthony, S. Lambert, R. S. Sillmon
Publikováno v:
Applied Physics Letters. 59:1218-1220
Photoreflectance (PR) response at the E1 (2.9 eV) transition of GaAs doped with Si, Zn, and Be was investigated within the range of 1.5×1015 to 2×1019 cm−3. Growth technique was either metalorganic chemical vapor deposition (MOCVD) or molecular b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b8540601a964a9af68a334ab9fa9d41
https://doi.org/10.1063/1.105508
https://doi.org/10.1063/1.105508
Autor:
R. S. Sillmon, J. A. Freitas
Publikováno v:
Applied Physics Letters. 56:174-176
An on‐demand atmospheric pressure storage system for AsH3 and PH3, which eliminates the sudden release hazard associated with compressed gases, has been developed and tested with AsH3. The storage system is based on the adsorption of these gases in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cd57ddb724ad53d9e927d59b60381101
https://doi.org/10.1063/1.103020
https://doi.org/10.1063/1.103020
Publikováno v:
Journal of Crystal Growth. 93:127-133
Previous experiments employing in-situ, real-time infrared laser diode absorption spectroscopy as a probe of the OMVPE reactor environment [J. Crystal Growth 77 (1986) 73 and 163] have been used to characterize gaseous chemical intermediates and to t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c16278962efc4ff6f62574ac6152e0a1
https://doi.org/10.1016/0022-0248(88)90517-9
https://doi.org/10.1016/0022-0248(88)90517-9
Publikováno v:
Journal of Electronic Materials. 18:501-504
We report on the OMVPE growth of modulation doped p-type Al0.43Ga0.57As(Be)/GaAs heterojunctions which exhibit a two-dimensional hole gas (2DHG). Hole mobilities de-termined by Hall or cyclotron resonance measurements at 300, 77, and 4 K were 394, 37
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3009807f9a31345a9055f56401315151
https://doi.org/10.1007/bf02657779
https://doi.org/10.1007/bf02657779
Publikováno v:
Physical Review B. 40:3447-3450
Optically detected magnetic resonance experiments performed on Si-doped epitaxial layers of AlAs and ${\mathrm{Al}}_{\mathrm{x}}$${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathrm{x}}$As with x\ensuremath{\ge}0.4 grown on (001) GaAs substrates reveal th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9dbfd2be1059d667711c76587eb3f49d
https://doi.org/10.1103/physrevb.40.3447
https://doi.org/10.1103/physrevb.40.3447
Publikováno v:
Journal of Electronic Materials. 17:161-170
Modulation spectroscopy is an optical characterization tool that can be of great utility to the materials scientist. We present here numerous examples where a simple photo-reflectance and electroreflectance setup is used in our laboratory to determin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b19e2f1943c4853cfc8fb0e4f9056691
https://doi.org/10.1007/bf02652147
https://doi.org/10.1007/bf02652147
Publikováno v:
Journal of Crystal Growth. 77:163-171
Absorption IR-diode laser spectroscopy was used to monitor the vibrational frequencies of gaseous species within an OMVPE reactor. The IR-diode laser system, when tuned to a metalalkyl line, served as an on-line monitor of flow dynamics in the OMVPE
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f4ccff43478b950275a4fbc5646bac3b
https://doi.org/10.1016/0022-0248(86)90297-6
https://doi.org/10.1016/0022-0248(86)90297-6
Silicon and beryllium doping of OMVPE grown AlxGa1−xAs (x = 0−0.3) using silane and diethylberyllium
Publikováno v:
Journal of Crystal Growth. 68:54-59
The doping of Al x Ga 1− x As with silicon and beryllium has been studied as a function of aluminum mole fraction x , dopant concentration and group V/III ratio. Silicon is a donor in this alloy system and its incorporation is controlled by thermod
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f74e1ef17e4ff399b5db009be51e7ffd
https://doi.org/10.1016/0022-0248(84)90397-x
https://doi.org/10.1016/0022-0248(84)90397-x