Zobrazeno 1 - 10
of 28
pro vyhledávání: '"R. S. Shenoy"'
Publikováno v:
ECS Journal of Solid State Science and Technology. 3:P263-P267
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2cc7cd99dc4e69915fcee0158ac254d2
https://doi.org/10.1149/2.011407jss
https://doi.org/10.1149/2.011407jss
Autor:
Greg S. Corrado, Roger W. Cheek, Dharmendra S. Modha, Chung H. Lam, Simone Raoux, B. N. Kurdi, Bryan L. Jackson, Alvaro Padilla, Kailash Gopalakrishnan, R. S. Shenoy, Charles T. Rettner, A. G. Schrott, Geoffrey W. Burr, Bipin Rajendran, Matthew J. Breitwisch
Publikováno v:
ACM Journal on Emerging Technologies in Computing Systems. 9:1-20
The memory capacity, computational power, communication bandwidth, energy consumption, and physical size of the brain all tend to scale with the number of synapses, which outnumber neurons by a factor of 10,000. Although progress in cortical simulati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ce24dc56f1b637d9bd3f0d8c0c616f0f
https://doi.org/10.1145/2463585.2463588
https://doi.org/10.1145/2463585.2463588
Publikováno v:
Resistive Switching
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9b7d1349992238618dfeecbcc9fe0e2c
https://doi.org/10.1002/9783527680870.ch22
https://doi.org/10.1002/9783527680870.ch22
Autor:
B. N. Kurdi, Kailash Gopalakrishnan, J. C. Scott, R. S. Shenoy, Chung H. Lam, Geoffrey W. Burr
Publikováno v:
IBM Journal of Research and Development. 52:449-464
Storage-class memory (SCM) combines the benefits of a solid-state memory, such as high performance and robustness, with the archival capabilities and low cost of conventional hard-disk magnetic storage. Such a device would require a solid-state nonvo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d597c63e5f4c324e3f0b978ba5381dc3
https://doi.org/10.1147/rd.524.0449
https://doi.org/10.1147/rd.524.0449
Autor:
Niyaz Khusnatdinov, Dwayne L. LaBrake, E. Sikorski, R. S. Shenoy, Cynthia B. Brooks, Ying Zhang, Kailash Gopalakrishnan, Arnie Ford, Gerard M. Schmid, Douglas J. Resnick, Ron Jih, Jordan Owens, Mary Beth Rothwell, Mark W. Hart
Publikováno v:
Microelectronic Engineering. 85:856-860
Optical lithography has been successful in achieving deep sub-wavelength images by the continuous improvement of lens systems, resists and the introduction of phase shift masks. One of the key challenges in attempting to pattern feature sizes less th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fd3736a9fbfaa9ad14e0c6c08fe8ad32
https://doi.org/10.1016/j.mee.2008.01.041
https://doi.org/10.1016/j.mee.2008.01.041
Autor:
N. S. Chokshi, D. J. Witte, R. Fabian, Bipin Rajendran, W. Pease, R. S. Shenoy, G. S. Tompa, R.L. De Leon
Publikováno v:
IEEE Transactions on Electron Devices. 54:707-714
Laser annealing can be used for electrical activation of dopants without excessively heating the material deeper within the work piece. The authors demonstrate that laser annealing could be used for activating the dopants in the upper levels of an ex
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8572265621314424282e834325142b4c
https://doi.org/10.1109/ted.2007.891300
https://doi.org/10.1109/ted.2007.891300
Autor:
R. S. Shenoy, C. di Nolfo, Robert M. Shelby, E.U. Giacometti, Pritish Narayanan, Geoffrey W. Burr, Junwoo Jang, B. N. Kurdi, Hyunsang Hwang, Kumar Virwani
Publikováno v:
2014 IEEE International Electron Devices Meeting.
Using 2 phase-change memory (PCM) devices per synapse, a 3-layer perceptron network with 164,885 synapses is trained on a subset (5000 examples) of the MNIST database of handwritten digits using a backpropagation variant suitable for NVM+selector cro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ad26f87854ad3a80926b449f1b6ba27
https://doi.org/10.1109/iedm.2014.7047135
https://doi.org/10.1109/iedm.2014.7047135
Publikováno v:
2014 IEEE International Electron Devices Meeting.
Access Devices (1AD) for crossbar resistive (1R) memories are compared via circuit-level analysis. We show that in addition to intrinsic properties, AD suitability for 1AD+1R memories is strongly dependent upon (a) nonvolatile memory (NVM) and (b) ci
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::653fb2cbbd07cb78792f5d526f479101
https://doi.org/10.1109/iedm.2014.7047137
https://doi.org/10.1109/iedm.2014.7047137
Autor:
Robert M. Shelby, Kota V. R. M. Murali, Kailash Gopalakrishnan, J. Mohammad, Charles T. Rettner, Geoffrey W. Burr, B. N. Kurdi, Pritish Narayanan, A. K. Deb, Alvaro Padilla, Donald S. Bethune, R. S. Shenoy, Karthik V. Raman, Mohit Bajaj, Rajan K. Pandey, Kumar Virwani
Publikováno v:
72nd Device Research Conference.
Numerical modeling is used to explain the origin of the large ON/OFF ratios, ultra-low leakage, and high ON current densities exhibited by BEOL-friendly Access Devices (AD) based on Cu-containing MIEC materials [1-5]. Motion of large populations of c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cf28e963d9431aff402cfc7e06b8e309
https://doi.org/10.1109/drc.2014.6872348
https://doi.org/10.1109/drc.2014.6872348
Autor:
Alvaro Padilla, Kailash Gopalakrishnan, Khanh Nguyen, Kumar Virwani, R. S. Shenoy, G. Ho, Charles T. Rettner, Geoffrey W. Burr, A. N. Bowers, Eric A. Joseph, Andrew J. Kellock, R. S. King, Teya Topuria, B. N. Kurdi, P. M. Rice, Noel Arellano, Matthew J. BrightSky, M. Jurich
Publikováno v:
2012 International Electron Devices Meeting.
BEOL-friendly Access Devices (AD) based on Cu-containing MIEC materials [1–3] are shown to scale to the 100uA) currents of NVM writes can reach 15ns; NVM reads at typical (∼5uA) current levels can be ≪1usec.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::28d31c0ec9921b7bb99afc9095e278a2
https://doi.org/10.1109/iedm.2012.6478967
https://doi.org/10.1109/iedm.2012.6478967