Zobrazeno 1 - 8
of 8
pro vyhledávání: '"R. S. Nowicki"'
Autor:
R. S. Nowicki
Publikováno v:
Journal of Vacuum Science and Technology. 14:127-133
In a preliminary study, the following properties of planar magnetron, rf‐sputtered Al2O3 films were investigated: deposition uniformity, floating substrate bias potential, Al:O ratio and impurity content by 4He+ backscatter analysis, H2 content by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2b7e50e4d0180f5fc138db9ffcfd68d2
https://doi.org/10.1116/1.569103
https://doi.org/10.1116/1.569103
Publikováno v:
Journal of The Electrochemical Society. 123:120-124
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2064fa8c5b0d0e5ed8ddf9d56a2db6d1
https://doi.org/10.1149/1.2132743
https://doi.org/10.1149/1.2132743
Effects of dc substrate bias on the properties of rf‐sputtered amorphous germanium ditelluride films
Publikováno v:
Journal of Applied Physics. 45:50-59
We have studied the changes in chemical composition, capture and release of argon, electrical conductivity, and morphology of crystallization which result from changes in dc bias applied to the substrate during the rf sputtering of amorphous thin fil
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ed30db6346db06d7659a0bd6041e1dda
https://doi.org/10.1063/1.1663015
https://doi.org/10.1063/1.1663015
Publikováno v:
Journal of Vacuum Science and Technology. 11:675-679
We report a preliminary survey of the effects of dc substrate bias and residual gas contamination on the average composition, internal stress, electrical conductivity, and crystal structure of molybdenum films deposited by rf sputtering. We find stro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f37bb2bd7a276d5acebe6c3874220f8
https://doi.org/10.1116/1.1312734
https://doi.org/10.1116/1.1312734
Autor:
Arthur J. Learn, R. S. Nowicki
Publikováno v:
Applied Physics Letters. 35:611-614
The transport of polycrystalline silicon into an overlying aluminum film and silicon regrowth in the metal medium under heating at 500 °C was examined as a function of doping level and grain size of the silicon. Such regrowth was eliminated through
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::49349330407f8983e3250a902f07a1aa
https://doi.org/10.1063/1.91226
https://doi.org/10.1063/1.91226
Publikováno v:
Thin Solid Films. 53:195-205
The temperature stability of a composite film structure of 1500 A of Ti0.3W0.7 and 3000 A of gold r.f. sputtered sequentially onto an evaporated aluminum film 9000 A thick on silicon was investigated by Auger depth profile analysis. Annealing of this
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::73267d99a543c62c2c3c99e124c5dc88
https://doi.org/10.1016/0040-6090(78)90035-4
https://doi.org/10.1016/0040-6090(78)90035-4
Autor:
R. S. Nowicki
Publikováno v:
Journal of Vacuum Science and Technology. 17:384-387
The influence of trace residual gases on the film specularity, grain size, and resistivity of aluminum–1.5% silicon alloy was investigated. Oxygen and nitrogen are shown to be the major contributors to loss of film specularity. The reflectance is d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::65048401ec2abd693b6e07f124927f78
https://doi.org/10.1116/1.570395
https://doi.org/10.1116/1.570395
Autor:
I. Wang, R. S. Nowicki
Publikováno v:
Journal of Vacuum Science and Technology. 15:235-237
In a contact metallization employing Mo as a thin‐film ’’diffusion barrier’’, we have observed that this refractory metal does not exhibit optimum barrier properties when rf sputtered in argon. It was found that the use of ∠1500 A of rf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5140ed47ec5d69d77786e4be51c1aa0e
https://doi.org/10.1116/1.569487
https://doi.org/10.1116/1.569487