Zobrazeno 1 - 10
of 69
pro vyhledávání: '"R. S. Newrock"'
Publikováno v:
Nanoelectronic Device Applications Handbook ISBN: 9781315216089
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::489cef543131b3e0682ccb0e59202c63
https://doi.org/10.1201/b15035-65
https://doi.org/10.1201/b15035-65
Publikováno v:
Journal of Nanoelectronics and Optoelectronics. 6:95-101
A non-equilibrium Green's function formalism is used to study in detail the ballistic conductance of asymmetrically biased side-gated quantum point contacts (QPCs) in the presence of lateral spin-orbit coupling and electron-electron interaction for a
Autor:
P. Debray, R. S. Newrock, Mustafa Muhammad, Marc Cahay, Saydur Rahman, Steven Herbert, Sergio E. Ulloa, Mark Johnson, J. Wan, Anh T. Ngo
Publikováno v:
Nature Nanotechnology. 4:759-764
The controlled creation, manipulation and detection of spin-polarized currents by purely electrical means remains a central challenge of spintronics. Efforts to meet this challenge by exploiting the coupling of the electron orbital motion to its spin
Publikováno v:
Semiconductor Science and Technology. 17:R21-R34
The presence of pronounced electronic correlations in one-dimensional systems strongly enhances Coulomb coupling and is expected to result in distinctive features in the Coulomb drag between them that are absent in the drag between two-dimensional sy
We have observed hysteresis between the forward and reverse sweeps of a common mode bias applied to the two in-plane side gates of an asymmetrically biased GaAs quantum point contact. The size of the hysteresis loop increases with the amount of bias
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9bbcbdb5a01cea0c2243e1993cf7f20f
http://arxiv.org/abs/1403.3927
http://arxiv.org/abs/1403.3927
Publikováno v:
Journal of Physics: Condensed Matter. 13:3389-3402
The Coulomb drag between two spatially separated one-dimensional (1D) electron systems in lithographically fabricated 2??m long quantum wires is studied experimentally. The drag voltage VD shows peaks as a function of a gate voltage which shifts the
Autor:
M. A. Tischler, R. S. Newrock, Joan M. Redwing, David Mast, Jeffrey S. Flynn, Said Elhamri, M. Ahoujja, W. C. Mitchel
Publikováno v:
Journal of Electronic Materials. 27:210-214
We have experimentally determined the effective mass (m*) of GaN, the classical (τc), and quantum (τq) scattering times for a two-dimensional electron gas residing at the interface of an AlGaN/GaN heterostructure, using the Shubnikovde Haas effect.
Autor:
W. C. Mitchel, M. A. Tischler, David Mast, J. S. Flynn, Joan M. Redwing, Said Elhamri, M. Ahoujja, R. S. Newrock
Publikováno v:
Physical Review B. 57:1374-1377
Autor:
H.-K. Shin, David Mast, Y. Jun, K. Ravindran, R. S. Newrock, Said Elhamri, Steven Herbert, Christopher Lobb
Publikováno v:
Physical Review B. 57:1154-1163
We have investigated the Kosterlitz-Thouless (KT) transition in a series of proximity-coupled Josephson junction arrays of varying widths. Our results indicate that the KT transition in any experimentally realizable sample is almost always obscured b
Effect of well thickness on the two-dimensional electron-hole system inAlxGa1−xSb/InAs quantum wells
Autor:
M. Ahoujja, W. C. Mitchel, Jih-Chen Chiang, Ikai Lo, R. Kaspi, Shiow-Fon Tsay, R. S. Newrock, Said Elhamri
Publikováno v:
Physical Review B. 55:13677-13681
We have studied the effect of well thickness on the two-dimensional electron-hole system in semimetallic ${\mathrm{Al}}_{\mathrm{x}}$${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathrm{x}}$Sb/InAs quantum wells by Shubnikov--de Haas (SdH) measurements. T