Zobrazeno 1 - 4
of 4
pro vyhledávání: '"R. S. Low"'
Autor:
S. Urano, R. S. Low, M. Faris, M. Ishiguro, I. Nagase, A. Baratov, J. T. Asubar, T. Motoyama, Y. Nakamura, Z. Yatabe, M. Kuzuhara
Publikováno v:
2021 IEEE International Meeting for Future Electron Devices, Kansai (IMFEDK).
Autor:
M. Ishiguro, S. Urano, R. S. Low, M. Faris, I. Nagase, A. Baratov, J. T. Asubar, T. Motoyama, Y. Nakamura, Z. Yatabe, M. Kuzuhara
Publikováno v:
2021 IEEE International Meeting for Future Electron Devices, Kansai (IMFEDK).
Publikováno v:
2019 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK).
We investigated the effect of SiN capping of the AlGaN surface during ohmic annealing process on the performance of AlGaN/GaN HEMTs. In comparison with the devices without any capping, devices with SiN capping exhibited small variation in threshold v
Publikováno v:
Australasian radiology.
A case of endometrioma of the right inguinal canal region, diagnosed preoperatively, is presented. The diagnosis was made on the basis of cyclical symptoms relating to menstrual periods, in combination with demonstration of blood products within an e