Zobrazeno 1 - 10
of 45
pro vyhledávání: '"R. S. Kern"'
Autor:
Jonathan J. Wierer, R. S. Kern, W. Götz, S. A. Stockman, Paul S. Martin, Daniel A. Steigerwald, Andrew Y. Kim, Michael R. Krames, Frank M. Steranka, J. Sun, Nathan F. Gardner
Publikováno v:
physica status solidi (a). 188:15-21
The performance of high-power AlInGaN light emitting diodes (LEDs) is characterized by light output–current–voltage (L–I–V) measurements for devices with peak emission wavelengths ranging from 428 to 545 nm. The highest external quantum effic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8d0599735206bae14e7d5110a907867f
https://doi.org/10.1002/1521-396x(200111)188:1<15::aid-pssa15>3.0.co
https://doi.org/10.1002/1521-396x(200111)188:1<15::aid-pssa15>3.0.co
Publikováno v:
Thin Solid Films. 371:153-160
The early stages of thermal oxidation of gallium nitride epilayers in dry O 2 have been studied using surface sensitive analytical techniques and transmission electron microscopy. Deconvolution of the Ga 3d core level spectra from X-ray photoelectron
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::304977a983a221b837a9e01da2e4a68e
https://doi.org/10.1016/s0040-6090(00)00984-6
https://doi.org/10.1016/s0040-6090(00)00984-6
Publikováno v:
Semiconductor Science and Technology. 15:756-760
The Al/Ti/n-GaN ohmic contact and multilayer variations on this contact are widely used because of the low contact resistivities they provide to n-GaN. However, there are few reports that reveal the influence of the atomic ratio of Al to Ti on the co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::059ec5955a8dd05ee83bbf42ffd4ce9e
https://doi.org/10.1088/0268-1242/15/7/316
https://doi.org/10.1088/0268-1242/15/7/316
Autor:
Brent S. Krusor, R. S. Kern, C. G. Van de Walle, W. Götz, Joel W. Ager, Linda T. Romano, J Ho, T. Schmidt, R Lau
Publikováno v:
Physica B: Condensed Matter. :50-53
The amount of strain was measured in GaN films using X-ray diffraction, Raman, and curvature techniques as a function of film thickness and the Si doping concentration. It was found that for a doping concentration of 2×1019, the threshold thickness
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0be038763938544940ee9789c75951d6
https://doi.org/10.1016/s0921-4526(99)00404-4
https://doi.org/10.1016/s0921-4526(99)00404-4
Publikováno v:
Journal of Materials Research. 13:1816-1822
Solid solutions of aluminum nitride (AlN) and silicon carbide (SiC) have been grown at 900–1300 °C on vicinal α (6H)-SiC(0001) substrates by plasma-assisted, gas-source molecular beam epitaxy. Under specific processing conditions, films of (AlN)x
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4baddbfa25c7cc1560b153a0a86b7eb5
https://doi.org/10.1557/jmr.1998.0257
https://doi.org/10.1557/jmr.1998.0257
Publikováno v:
Materials Science Forum. :1181-1184
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c2d22d326ee0917cd48337630d2c36f
https://doi.org/10.4028/www.scientific.net/msf.264-268.1181
https://doi.org/10.4028/www.scientific.net/msf.264-268.1181
Publikováno v:
Journal of Crystal Growth. 183:581-593
Thin films of silicon carbide (SiC) have been grown at 1000–1500°C on vicinal and on-axis α(6H)-SiC(0 0 0 1) substrates by gas-source molecular-beam epitaxy (GSMBE). Growth on on-axis and off-axis 6H-SiC(0 0 0 1) substrates using the SiH 4 C 2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3a43d33dcd608f3f53b95572903ee2ba
https://doi.org/10.1016/s0022-0248(97)00471-5
https://doi.org/10.1016/s0022-0248(97)00471-5
Publikováno v:
Diamond and Related Materials. 6:1282-1288
Gas-source molecular beam epitaxy has been employed to grown thin films of SiC and AlN on vicinal and on-axis 6H-SiC(0001). Growth using the SiH4C2H4 system resulted in 3C-SiC(111) epilayers under all conditions of reactant gas flow and temperatur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::80ac93254500ee945d2e621b0b8a02bd
https://doi.org/10.1016/s0925-9635(97)00066-6
https://doi.org/10.1016/s0925-9635(97)00066-6
Publikováno v:
physica status solidi (b). 202:379-404
The homoepitaxial growth of SiC thin films by solid- and gas-source molecular beam epitaxy is reviewed and discussed. Our recent results regarding the homoepitaxial growth of single crystal 3C-SiC(111) and 6H-SiC(0001) thin films are also presented.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::90272bb0cb3cd4f9ecc867458de8a864
https://doi.org/10.1002/1521-3951(199707)202:1<379::aid-pssb379>3.0.co
https://doi.org/10.1002/1521-3951(199707)202:1<379::aid-pssb379>3.0.co
Autor:
Kevin J. Linthicum, Robert F. Davis, Zlatko Sitar, K. S. Ailey, M. J. Paisley, Satoru Tanaka, R. S. Kern, D.J. Kester, L.B. Rowland
Publikováno v:
Journal of Crystal Growth. 178:87-101
Amorphous, hexagonal and cubic phases of BN were grown via ion beam assisted deposition on Si(1 0 0) substrates. Gas-source molecular beam epitaxy of the III–V nitrides is reviewed. Sapphire(0 0 0 1) is the most commonly employed substrate with 6H-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::29b175c1b122f6d760536a2662555651
https://doi.org/10.1016/s0022-0248(97)00077-8
https://doi.org/10.1016/s0022-0248(97)00077-8