Zobrazeno 1 - 10
of 17
pro vyhledávání: '"R. S. Attaluri"'
Autor:
Peter Vines, Sanjay Krishna, Thomas E. Vandervelde, R. S. Attaluri, Chee Hing Tan, John P. R. David
Publikováno v:
IEEE Journal of Quantum Electronics. 47:607-613
We present a systematic study of noise, gain, responsivity, and specific detectivity D* , in a series of low-strain dot-in-a-well (DWELL) quantum dot infrared photodetectors (QDIPs). The lattice-matched GaAs quantum wells and AlGaAs barriers in these
Autor:
Peter Vines, Sanjay Krishna, Chee Hing Tan, Thomas E. Vandervelde, Majeed M. Hayat, Woo-Yong Jang, John P. R. David, R. S. Attaluri
Publikováno v:
IEEE Journal of Quantum Electronics. 47:190-197
We report on the implementation of an algorithm-based spectrometer capable of reconstructing the spectral shape of materials in the mid-wave infrared (MWIR) and long-wave infrared (LWIR) wavelengths using only experimental photocurrent measurements f
Autor:
Thomas E. Vandervelde, Sam Kyu Noh, R. S. Attaluri, Majeed M. Hayat, Sanjay Krishna, Steven C. Bender, J.S. Tyo, Woo-Yong Jang, Y.D. Sharma, Sang Jun Lee, E.R. Cantwell, R. V. Shenoi, Andreas Stintz
Publikováno v:
IEEE Journal of Quantum Electronics. 45:674-683
The quantum-confined Stark effect in intersublevel transitions present in quantum-dots-in-a-well (DWELL) detectors gives rise to a midIR spectral response that is dependent upon the detector's operational bias. The spectral responses resulting from d
Spectrally tunable quantum dot infrared detectors: Implementation of an algorithm-based spectrometer
Autor:
Woo-Yong Jang, Peter Vines, R. S. Attaluri, Sanjay Krishna, Chee Hing Tan, Majeed M. Hayat, Thomas E. Vandervelde, John P. R. David
Publikováno v:
2010 IEEE Photinic Society's 23rd Annual Meeting.
Panchromatic (or wideband) infrared (IR) imagers enable day/night surveillance, imaging through smoke, identification of targets as well as mapping of material compositions. The signals, covering an IR wavelength range of 7–14µm, usually referred
Autor:
Sanjay Krishna, Peter Vines, Thomas E. Vandervelde, Chee Hing Tan, Woo-Yong Jang, R. S. Attaluri, John P. R. David, Majeed M. Hayat
Publikováno v:
SPIE Proceedings.
We report on low strain quantum dot infrared photodetectors (QDIP) with 80 dot in a well (DWELL) stacks. These QDIPs have been grown with lattice matched Al0.1Ga0.9As barriers and GaAs wells allowing a large number of stacks to be grown leading to an
Autor:
Majeed M. Hayat, Peter Vines, Sanjay Krishna, Woo-Yong Jang, Chee Hing Tan, R. S. Attaluri, Thomas E. Vandervelde, John P. R. David
Publikováno v:
2009 IEEE LEOS Annual Meeting Conference Proceedings.
Quantum dot infrared photodetectos (QDIP) have received considerable interest for over a decade due to their sensitivity to normal incidence radiation and long excited carrier lifetimes[1]. A dot-in-a-well (DWELL) QDIP structure consisting of an InGa
Publikováno v:
Scopus-Elsevier
Ultrafast density-dependent optical spectroscopic measurements on a quantum dots-in-a-well heterostructure reveal several distinctive phenomena, most notably a strong coupling between the quantum well population and light absorption at the quantum do
Autor:
John P. R. David, Thomas E. Vandervelde, Sanjay Krishna, Chee Hing Tan, Peter Vines, R. S. Attaluri
Publikováno v:
SPIE Proceedings.
Quantum dot infrared photodetectors (QDIP) have established themselves as promising devices for detecting infrared (IR) radiation for wavelengths
Autor:
Jessie Rosenberg, Oskar Painter, R. V. Shenoi, Yagya D. Sharma, Sanjay Krishna, R. S. Attaluri, David A. Ramirez
We report Quantum Dot Infrared Detectors (QDIP) where light coupling to the self assembled quantum dots is achieved through plasmons occurring at the metal-semiconductor interface. The detector structure consists of an asymmetric InAs/InGaAs/GaAs dot
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4398b9ed101ab51e57a3aaf080428667
https://resolver.caltech.edu/CaltechAUTHORS:20180709-162813190
https://resolver.caltech.edu/CaltechAUTHORS:20180709-162813190
Publikováno v:
2006 IEEE LEOS Annual Meeting Conference Proceedings.
In this paper we demonstrate an intersubband quantum dot detector coupled to an avalanche photodiode to improve the signal-to-noise ratio and increase the operating temperature of the device. Mid-infrared photodetectors, operating in the 50-400 meV (