Zobrazeno 1 - 10
of 61
pro vyhledávání: '"R. S. Ajimsha"'
Publikováno v:
Scientific Reports, Vol 14, Iss 1, Pp 1-8 (2024)
Abstract ZnO based piezoelectric nanogenerators (PENG) hold immense potential for harvesting ambient vibrational mechanical energy into electrical energy, offering sustainable solutions in the field of self-powered sensors, wearable electronics, huma
Externí odkaz:
https://doaj.org/article/917061a114f24ddc8e77b149823631c0
Autor:
Mousam Charan Sahu, Anjan Kumar Jena, Sameer Kumar Mallik, Suman Roy, Sandhyarani Sahoo, R. S. Ajimsha, Pankaj Misra, Satyaprakash Sahoo
Publikováno v:
ACS Applied Materials & Interfaces. 15:25713-25725
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b08ec5c4e08645b9428d7e6b535f6c13
https://doi.org/10.1021/acsami.3c02727
https://doi.org/10.1021/acsami.3c02727
Autor:
Partha Sarathi Padhi, R. S. Ajimsha, S. K. Rai, U. K. Goutam, Aniruddha Bose, Sushmita Bhartiya, Pankaj Misra
Publikováno v:
Nanoscale. 15:8337-8355
The dielectric and electrical characteristics of ATA NLs were significantly enhanced owing to a considerable improvement in the conductivity contrast between sublayers and a substantial decrement in impurity/contaminant concentration.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::df237acabc2143b34585596240343808
https://doi.org/10.1039/d3nr00909b
https://doi.org/10.1039/d3nr00909b
Publikováno v:
Journal of Materials Science: Materials in Electronics. 34
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6b348cafc38fb1f6f7b8569c6b47af0
https://doi.org/10.1007/s10854-023-10615-3
https://doi.org/10.1007/s10854-023-10615-3
Autor:
S. K. Chetia, P. Rajput, R. S. Ajimsha, R. Singh, A. K. Das, R. Kumar, P. S. Padhi, A. K. Sinha, S. N. Jha, T. K. Sharma, P. Misra
Publikováno v:
Applied Physics A. 128
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f88824ff88fc31ab798a570c06d9c002
https://doi.org/10.1007/s00339-022-05797-2
https://doi.org/10.1007/s00339-022-05797-2
Publikováno v:
Energy & Environmental Science. 14:4125-4129
In their recent paper published in Energy and Environmental Science (DOI: 10.1039/D0EE00825G), Zhang et al. demonstrated that if a part of the Au/n-Si Schottky junction is kept in shadow and the remaining under illumination, a potential difference is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e1d287dde6dfff525c58440bca71f170
https://doi.org/10.1039/d0ee03214j
https://doi.org/10.1039/d0ee03214j
Publikováno v:
ACS Applied Electronic Materials. 2:651-658
We propose a model based on the evolution of electron and surface charge density to describe the ultraviolet photoresponse in MgZnO thin films. The MgZnO surface contains a high density of surface ...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ffd50d5cdf6620129ddd8558ab451540
https://doi.org/10.1021/acsaelm.9b00763
https://doi.org/10.1021/acsaelm.9b00763
Publikováno v:
ECS Journal of Solid State Science and Technology. 8:Q61-Q65
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ca88be33f872ff186de8b038a5e63d34
https://doi.org/10.1149/2.0171903jss
https://doi.org/10.1149/2.0171903jss
Publikováno v:
ADVANCED MATERIALS AND RADIATION PHYSICS (AMRP-2020): 5th National e-Conference on Advanced Materials and Radiation Physics.
We have grown ZrO2 thin films on silicon, sapphire and Pt-Si substrates using pulsed laser deposition by varying oxygen partial pressure in the range ∼1×10−1 to 1×10−5 mbar at a substrate temperature of ∼373K. The influence of oxygen partia
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eba411e42d85416bcc44f090282ecdbc
https://doi.org/10.1063/5.0052595
https://doi.org/10.1063/5.0052595
Publikováno v:
Computational Mathematics, Nanoelectronics, and Astrophysics ISBN: 9789811597077
In recent times, memory devices based on resistive switching (RS) phenomena in dielectric materials have become a strong contender for the futuristic universal memory. Among other materials being explored for RS application, tantalum pentaoxide (Ta2O
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::91759ad26425743b51f1fca73cda9ec1
https://doi.org/10.1007/978-981-15-9708-4_14
https://doi.org/10.1007/978-981-15-9708-4_14
