Zobrazeno 1 - 10
of 32
pro vyhledávání: '"R. Roussille"'
Publikováno v:
Physics of Narrow Gap Semiconductors ISBN: 9783540111917
Epitaxial layers of cadmium mercury telluride are simultaneously grown onto several CdTe substrates (total area 20 cm2) by cathodic sputtering in a mercury vapour plasma. The transition region between the CdHgTe layer and the substrate is very narrow
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f699458e61f208cf9cc34fe0939ded30
https://doi.org/10.1007/3-540-11191-3_14
https://doi.org/10.1007/3-540-11191-3_14
Publikováno v:
Zeitschrift f�r Physik A Atoms and Nuclei. 282:303-314
The decay of149Pr (T1/2=2.2 min) has been studied using the two fission product separators JOSEF and LOHENGRIN to produce the149Pr nucleus. A level scheme for149Nd has been established. Theβ-branching and logft values for the excited levels were ded
Publikováno v:
Nuclear Physics A. 258:257-263
The conversion electrons following thermal neutron capture in 146 Nd have been studied in the energy range 30 E e 147 Nd are compared with the two other N = 87 isotones; the properties of these nuclei can be understood in the framework of the spheric
Publikováno v:
Nuclear Physics A. 246:380-394
The level structure of 147Nd has been established from the study of the prompt γ-rays following thermal neutron capture in 146Nd. Within the energy range 50
Publikováno v:
Nuclear Physics A. 264:1-12
The level structure of 149Nd has been established from the study of the prompt γ-rays following thermal neutron capture in 148Nd. Within the energy range 26
Autor:
H. Schrader, G. Siegert, Hermann Wollnik, R. Decker, R. Roussille, J. Greif, G. Bailleul, E. Monnand, A. Pinston, F. Schussler, B. Pfeiffer, J.P. Bocquet, M. Asghar, J. Blachot
Publikováno v:
Journal de Physique. 38:9-16
Gamma spectra and half-lives of 100Y, 100Zr, 149Ce, 149Pr, 150Ce, 150Pr, 135 Te, 136Te, 137Te, 85Se, 86Se, 87Se and 88Se have been measured using the unslowed fission product separator Lohengrin. The ground state beta branching has been measured for
Publikováno v:
Journal of Crystal Growth. 59:270-275
It is well known today that damage induced by ion implantation in Hg1−xCdxTe is responsible for the n+ electrical activity obtained without annealing and that the formation of this layer depends little on the conditions of implantation and on the c
Autor:
T. von Egidy, R. E. Chrien, P. Jeuch, H.G. Börner, K. Schreckenbach, W.F. Davidson, W. Mampe, R.C. Greenwood, R. Roussille, J.A. Pinston
Publikováno v:
Nuclear Physics A. 317:363-387
The excited levels in 233 Th have been studied using thermal and average resonance neutron capture in 232 Th. 2 keV and 24 keV neutron capture has been investigated at the Brookhaven HFBR filtered beam facility. Conversion electrons and low energy γ
Publikováno v:
Nuclear Instruments and Methods. 175:401-423
DuMond-type curved-crystal γ-ray spectrometers have been constructed and installed at the High Flux Reactor in Grenoble. They are used for the measurement of low energy γ-rays up to about 1500 keV emitted by an in-pile target after neutron capture.
Crystallographic properties of as grown CdxHg1-xTe epitaxial layers deposited by cathodic sputtering
Autor:
R. Roussille
Publikováno v:
Journal of Crystal Growth. 56:101-107
Large areas (up to 15 cm2) CdxHg1-xTe epitaxial layers with Cd composition (x value) from 0.14 to 0.4 (thickness < 15 μm) have been sputtered on to CdTe substrates with [111] orientations. The layers are grown on substrates heated up to 200°C with