Zobrazeno 1 - 10
of 51
pro vyhledávání: '"R. Riemenschneider"'
Autor:
G Böhm, H. Künzel, Hans L. Hartnagel, E Goutain, J. Pfeiffer, M. Aziz, R Genovese, P. Meißner, M.C Amann, W Görtz, J. Peerlings, R. Riemenschneider
Publikováno v:
Materials Science in Semiconductor Processing. 3:409-412
In this work we report on micromechanically tunable Fabry–Perot filter concepts for wavelength division multiplexing (WDM) systems. The optical resonator is designed for a cavity length around 30 μm in order to increase the filter selectivity whil
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e9175657a213e6f3dfa99a8acb2d257f
https://doi.org/10.1016/s1369-8001(00)00065-2
https://doi.org/10.1016/s1369-8001(00)00065-2
Autor:
A. Dehe, Hans L. Hartnagel, J. Peerlings, Alexander Vogt, J. Pfeiffer, Peter Meissner, H. Künzel, R. Riemenschneider, K. Streubel
Publikováno v:
Sensors and Actuators A: Physical. 68:365-371
Modern telecommunication demands tunable detectors that are needed for optical demultiplexing of fibre-transmitted data. The receiver therefore consists of a wavelength-selective detector sensitive around 1550 nm. Since detectors for this wavelength
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6218fdd39ae4438d655812a793072084
https://doi.org/10.1016/s0924-4247(98)00071-5
https://doi.org/10.1016/s0924-4247(98)00071-5
Autor:
R. Riemenschneider, Adam G. Balogh, Horst Baumann, K. Neubeck, M. Rodewald, D.M. Rück, Horst Hahn
Publikováno v:
Materials Science Forum. :125-128
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::74ad4182d0d57a381b49cc0501f53104
https://doi.org/10.4028/www.scientific.net/msf.248-249.125
https://doi.org/10.4028/www.scientific.net/msf.248-249.125
Publikováno v:
Journal of The Electrochemical Society. 143:1945-1948
The results of a study of electrochemically fabricated Pt/n-InP Schottky contacts and the feasibility of the process for InP-based metal-semiconductor-metal photodetectors are reported in the present paper. The electrochemical process yields a signif
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b139fe679cb1a6b11ca5a5babf5ff4c
https://doi.org/10.1149/1.1836929
https://doi.org/10.1149/1.1836929
Publikováno v:
Solid-State Electronics. 38:413-417
We report on measurement results of temperature-dependent low-frequency noise of VPE-grown ( v apour- p hase e pitaxy) GaAs epitaxial layers, which have been passivated by photo and plasma CVD ( c hemical- v apour d eposition) of SiO2, using SiH4 and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3f7bc23b00e2cf7b7e95dd4ea248a582
https://doi.org/10.1016/0038-1101(94)00100-t
https://doi.org/10.1016/0038-1101(94)00100-t
Publikováno v:
Applied Surface Science. 69:277-280
An improved deposition technique of phospho-silicate glass (PSG) for the passivation of InP has been developed using a low-temperature plasma-enhanced chemical vapour deposition (PECVD). Leakage-current measurements, capacitance-voltage analyses (C-V
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::926b13609e86de187e357747ccca612e
https://doi.org/10.1016/0169-4332(93)90518-g
https://doi.org/10.1016/0169-4332(93)90518-g
Autor:
R. Riemenschneider, H. Hartnagel
Publikováno v:
ChemInform. 28
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5911d846c0a797b08fb8c4ab9e4e5530
https://doi.org/10.1002/chin.199739298
https://doi.org/10.1002/chin.199739298
Autor:
H. L. Hartnagel, R. Riemenschneider
Publikováno v:
ChemInform. 28
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::935d7f466fc29660937e3ef139beb358
https://doi.org/10.1002/chin.199737307
https://doi.org/10.1002/chin.199737307
Autor:
S. Herbst, Peter Meissner, Volker Scheuer, J. Peerlings, V.N. Kumar, R. Riemenschneider, Hans L. Hartnagel, J. Pfeiffer, J. Daleiden, Martin Strassner, Kabula Mutamba
Publikováno v:
IEEE Photonics Technology Letters. 11:260-262
For the first time a two-chip wavelength-selective InGaAs-InP Fabry-Perot p-i-n receiver for dense wavelength-division-multiplexed systems is presented. This concept allows one to easily place the p-i-n diode outside the resonant cavity. A cavity len
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b0adf62b4eb3e1332421686f5c80c391
https://doi.org/10.1109/68.740723
https://doi.org/10.1109/68.740723
Autor:
J. Pfeiffer, K. Hjort, J. Peerlings, R. Riemenschneider, D. Rondi, Pierre Viktorovitch, M. Strassner, E. Goutin, J. Daleiden, Alain Spisser, Jean Louis Leclercq, N. Chitica
Publikováno v:
Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362).
An InP-based widely tunable and highly selective surface micromachined Fabry Perot filter for /spl lambda/=1.55 /spl mu/m is demonstrated. We present for the first time transmission measurements in a fiber-to-fiber setup and show that the devices are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a4559ce92493ab7b9cd54045af3f3433
https://doi.org/10.1109/iciprm.1999.773690
https://doi.org/10.1109/iciprm.1999.773690