Zobrazeno 1 - 7
of 7
pro vyhledávání: '"R. Ramakrishna Rao"'
Autor:
P. A. Megat Mohamad Zainuddin, M. Mohd Zain, S. Sabir Husin Athar, S. S. Ch’ng, R. Nasadurai, D. R. Ramakrishna Rao, Y. Z. Cheng, Hazlyna Baharuddin
Publikováno v:
Annals of the Rheumatic Diseases. 80:1346.2-1347
Background:Hip fractures are associated with significant morbidity, mortality, loss of independence and financial burden.1 There is a positive influence of calcium and vitamin D supplementation on the fracture-healing outcome.2 Recent evidence suppor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::47b061e381bd73ba6529dd5b941012fd
https://doi.org/10.1136/annrheumdis-2021-eular.4240
https://doi.org/10.1136/annrheumdis-2021-eular.4240
Publikováno v:
Solid-State Electronics. 114:49-54
The high concentration of interface traps in SiC Double-implanted (D) MOSFETs makes the threshold voltage imprecise, and kills the surface mobility which raises the channel and accumulation layer resistances. Using a detailed comparison with numerica
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::199c72590760acae8628276c0b595864
https://doi.org/10.1016/j.sse.2015.07.005
https://doi.org/10.1016/j.sse.2015.07.005
Autor:
Stephen Daley Arthur, Zachary Stum, Peter Almern Losee, Jeff Nasadoski, R. Ramakrishna Rao, D. Kurt Gaskill, Alexander Viktorovich Bolotnikov, Ljubisa Dragoljub Stevanovic, Charles R. Eddy, Kevin Matocha, Osama Saadeh, Rachael L. Myers-Ward
Publikováno v:
Materials Science Forum. :637-640
Doubly-implanted SiC vertical MOSFETs were fabricated displaying a blocking voltage of 4.2kV and a specific on-resistance of 23 mΩ-cm2, on a 4.5mm x 2.25mm device. Design variations on smaller (1.1mm x 1.1mm) devices showed on-resistance as low as 1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f5db7ab9197e8861ad77761a73181a3c
https://doi.org/10.4028/www.scientific.net/msf.679-680.637
https://doi.org/10.4028/www.scientific.net/msf.679-680.637
Autor:
Jeff Nasadoski, Richard Alfred Beaupre, Rosa Ana Conte, Zachary Stum, Steve Arthur, Kevin Matocha, Ljubisa Dragoljub Stevanovic, Eladio Delgado, Keith Monaghan, J. L. Garrett, Peter Almern Losee, R. Ramakrishna Rao, Adam Gregory Pautsch
Publikováno v:
Materials Science Forum. :899-902
The development of large area, up to 70m/1kV (0.45cm x 0.45cm) 4H-SiC vertical DMOSFETs is presented. DC and switching characteristics of high-current, 100Amp All-SiC power switching modules are demonstrated using 0.45cm x 0.225cm DMOSFET die and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a4a3d0f14730f3b893232145036bfc3
https://doi.org/10.4028/www.scientific.net/msf.615-617.899
https://doi.org/10.4028/www.scientific.net/msf.615-617.899
Publikováno v:
Materials Science Forum. :797-800
The mobility of electrons in the inversion layer of 4H-Silicon Carbide (SiC) MOSFETs is lower than the ideal value due to the various scattering mechanisms that takes place at the surface. These scattering mechanisms are strong function of both the i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7d3948cf8eddc61f331c9e39b8792594
https://doi.org/10.4028/www.scientific.net/msf.615-617.797
https://doi.org/10.4028/www.scientific.net/msf.615-617.797
Publikováno v:
Materials Science Forum. :497-500
In 4H silicon carbide MOSFETs, threshold voltage varies with temperature. It is believed that this is caused by trapping of inversion electrons at high density of interface-traps (Dit) present at the SiC/SiO2 interface in 4H-SiC MOSFETs. In this work
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3659a8d707f4ad9135742ff7234efbc8
https://doi.org/10.4028/www.scientific.net/msf.556-557.497
https://doi.org/10.4028/www.scientific.net/msf.556-557.497
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