Zobrazeno 1 - 10
of 22
pro vyhledávání: '"R. Rakkhit"'
Publikováno v:
IEEE Electron Device Letters. 19:348-350
The gate oxide thickness increase in PMOSFET devices with BF/sub 2/ implanted p/sup +/ polysilicon gate is observed even when rapid thermal annealing (RTA) is used as a dopant activation thermal process. The increase of oxide thickness is studied as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4642b35cc4b00105edbac4de425a19b9
https://doi.org/10.1109/55.709640
https://doi.org/10.1109/55.709640
Publikováno v:
IEEE Electron Device Letters. 18:281-283
A comprehensive study of P, As, and hybrid As/P nLDD junctions is presented in terms of performance, reliability, and manufacturability for the first time. It is found that As junctions limit the performance of deep submicron devices due to unaccepta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ce1446cac91fb9aeeb835aa033a5c07f
https://doi.org/10.1109/55.585358
https://doi.org/10.1109/55.585358
Publikováno v:
IEEE Electron Device Letters. 15:25-27
Two metal etch systems are compared in terms of their impacts on submicron transistor gate oxide integrity. The magnetically enhanced RIE (MERIE) system is shown to cause significant gate oxide damage with a pronounced radial dependence. This damage
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::97d8056f23e27f204fb96faa9f99d995
https://doi.org/10.1109/55.289473
https://doi.org/10.1109/55.289473
Publikováno v:
1996 International Integrated Reliability Workshop Final Report.
Impact of boron penetration at the p/sup +/-poly/gate-oxide interface is investigated. It is shown that the onset of boron penetration at this interface can not be detected by conventional threshold or flatband voltage shifts of p-channel devices, bu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fd8a660088e405950513fe7ca7f8904b
https://doi.org/10.1109/irws.1996.583395
https://doi.org/10.1109/irws.1996.583395
Autor:
R. Rakkhit, J.T. Yue
Publikováno v:
29th Annual Proceedings Reliability Physics 1991.
Performance degradation of inverter-type circuit due to hot carrier injection is investigated. Frequency degradation of the ring oscillators was used as a monitor of the circuit performance for very short gate delay transients. A quasi-static approac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ff89eaa029987551eecc0524e9f0a174
https://doi.org/10.1109/relphy.1991.145996
https://doi.org/10.1109/relphy.1991.145996
Publikováno v:
IEEE 1995 International Integrated Reliability Workshop. Final Report.
A new method to measure thin oxide thickness in CMOS technology is presented. Using a constant Fowler-Nordheim tunneling current through the gate oxide, the tunnel voltage across the oxide has been shown to be linearly proportional to the gate oxide
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d8f75c83e072ea350a6a0c9b620d0b38
https://doi.org/10.1109/irws.1995.493597
https://doi.org/10.1109/irws.1995.493597
Autor:
Florentia Peintinger, Kristine Broglio, Emer O. Hanrahan, Funda Meric-Bernstam, D. Larsimont, V. Valero, Fatima Cardoso, Richard L. Theriault, Jennifer K. Litton, Peter M. Ravdin, Gabriel N. Hortobagyi, A. M. Gonzalez-Angulo, R Rakkhit, Aysegul Sahin, Thomas A. Buchholz, M.J. Piccart
Publikováno v:
Cancer Research. 69:701
Abstract #701 Background: Controversy surrounds the prognosis of breast cancer patients with T1a,bN0M0 tumors following locoregional therapy and the need for adjuvant systemic therapy, especially for HER2+ disease. The purposes of the study were to d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf0c7895053e90e4e90bc1b56c14e7d0
https://doi.org/10.1158/0008-5472.sabcs-701
https://doi.org/10.1158/0008-5472.sabcs-701
Publikováno v:
28th International Reliability Physics Symposium.
Drain-avalanche-induced hot hole injection in thin oxide MOS devices, used in flash-type EEPROM memory cells, is discussed. A significant amount of acceptor-like interface traps are generated by the injected hot holes, spreading into the channel regi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a59a0871dd63bc04191cf31849ebe8ee
https://doi.org/10.1109/irps.1990.363514
https://doi.org/10.1109/irps.1990.363514
Publikováno v:
27th International Reliability Physics Symposium.
A perturbation technique is used to solve the time-dependent transport equations, giving an accurate picture of the time dependence of hot-carrier-induced degradation in submicrometer MOS devices. The growth of the spatial distribution of both the in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::edebcb935a128b06f104a73f8ae50341
https://doi.org/10.1109/irps.1989.363370
https://doi.org/10.1109/irps.1989.363370
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