Zobrazeno 1 - 10
of 483
pro vyhledávání: '"R. R. Razouk"'
Autor:
W. Krautschneider, H. G. Wagemann
Publikováno v:
Journal of The Electrochemical Society. 129:2884-2885
Publikováno v:
Journal of Applied Physics. 53:800-803
Oxide charge generation resulting from the exposure of Si/SiO2 structures to scanning electron and laser beams during the anneal of ion implantation damage was investigated. Fixed oxide charge, interface trapped charge, and oxide trapped charge densi
Publikováno v:
IEEE Transactions on Software Engineering. :293-311
An environment to support designers in the modeling, analysis, and simulation of concurrent systems is described. It is shown how a fully nested structure model supports multilevel design and focuses attention on the interfaces between the modules wh
Publikováno v:
Journal of The Electrochemical Society. 131:887-894
Etude du transport et de l'introduction de chlore dans SiO 2 au cours de l'oxydation du silicium dans un melange O 2 /HCl a 1000-1100°C. Les resultats experimentaux montrent que le transport du chlore est favorise par un champ electrochimique dans l
Autor:
R. R. Razouk, M. Delfino
Publikováno v:
Journal of The Electrochemical Society. 129:606-609
Arsenic and boron implantation damage in silicon is analyzed by a four‐phase complex refractive index model approximation coupled with multiple‐angle of incidence ellipsometry. Boron, as B+, and arsenic monomer (As+) and dimer implants are examin
Publikováno v:
Journal of The Electrochemical Society. 130:2478-2482
The oxidation kinetics of tantalum disilicide/polycrystalline silicon composite structures in pyrogenic steam over the temperature range of 800/sup 0/-1000/sup 0/C have been investigated. The oxide formation over the tantalum silicide film has been f
Autor:
M. Delfino, R. R. Razouk
Publikováno v:
Journal of Applied Physics. 52:386-392
A four‐phase complex refractive index‐model approximation coupled with multiple‐angle‐of‐incidence ellipsometric measurements is utilized in an analysis of ion‐implantation damage in silicon. The four phases refer to the ambient, native o
Publikováno v:
Journal of Applied Physics; 4/14/2023, Vol. 133 Issue 14, p1-9, 9p
Autor:
Tsuda, Yasutaka, Yoshigoe, Akitaka, Ogawa, Shuichi, Sakamoto, Tetsuya, Yamamoto, Yoshiki, Yamamoto, Yukio, Takakuwa, Yuji
Publikováno v:
Journal of Chemical Physics; 12/21/2022, Vol. 157 Issue 23, p1-21, 21p
Autor:
R R Razouk, B E Deal
The dependence of fixed oxide charge density (Q sub ss)/q), interface state density (N sub st), and electron spin resonance P sub b signals on thermal oxidation process variables as well as their interrelationship has been investigated. Both n- and p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4a75b4cc0b1404f9777b8d1360145f4
https://doi.org/10.21236/ada080574
https://doi.org/10.21236/ada080574