Zobrazeno 1 - 10
of 11
pro vyhledávání: '"R. R. Poloczek"'
Autor:
H. L. Fiedler, K. T. Kallis, M. Seiffert, R. R. Poloczek, S. Brabender, M. R. Müller, Peter Glösekötter
Publikováno v:
Quantum Matter. 6:50-53
Autor:
Hendrik Schuh, Christopher Kontis, R. R. Poloczek, H. L. Fiedler, K. T. Kallis, Andreas Balkenohl
Publikováno v:
Quantum Matter. 3:381-387
Publikováno v:
Journal of Nano Research. 25:49-54
Based on silicon on insulator (SOI) technology [, a monocrystalline membrane is fabricated, in which a buried silicon dioxide layer in the silicon material is the sacrifice layer for the cavity. The membrane is a monocrystalline silicon top layer whi
Publikováno v:
Tagungsband.
Zur Realisierung von Drucksensoren ist die Wandlung der druckbedingten mechanischen Verformung einer Membran in ein elektrisches Signal unerlasslich. Im Rahmen des Artikels werden hierfur innovative Moglichkeiten zur monolithischen Integration in Sil
Publikováno v:
Journal of Nanoscience and Nanotechnology. 10:6046-6048
The availability of multiple metal layers has become essential for high-density layouts and economic chip size. The presented paper describes an efficient and low-cost alternative to Chemical-Mechanical-Polishing (CMP). The method uses an auxiliary w
Publikováno v:
Microelectronic Engineering. 87:1413-1415
This work discusses the potential of process optimization of reactive ion etching processes by the help of desirability. The idea is a model based approach due to the complexity of the chemical and physical operational sequence within the plasma duri
Publikováno v:
2013 IEEE SENSORS.
Based on silicon on insulator (SOI) technology, a novel absolute pressure sensor with a pseudo-MOSFET read-out is designed and fabricated, in which a buried silicon dioxide layer in the silicon material is the sacrifice layer for the cavity. The memb
Publikováno v:
2013 13th IEEE International Conference on Nanotechnology (IEEE-NANO 2013).
An experimental research on a novelty method of creating monocrystalline Silicon-membranes by using nanoholes is shown in this paper. A Silicon-on-insulator (SOI) wafer is used as a substrate, whose buried oxide (BOX) demonstrates the sacrificial lay
Autor:
Namysłowski G; II Katedra i Klinika Laryngologii Slaskiej AM w Zabrzu., Poloczek R, Pietrawska W, Urban I
Publikováno v:
Otolaryngologia polska = The Polish otolaryngology [Otolaryngol Pol] 1998; Vol. 52 (5), pp. 615-7.
Autor:
Namysłowski G; II Katedra i Klinika Laryngologii Slaskiej AM w Zabrzu., Poloczek R, Pietrawska W, Urbaniec P
Publikováno v:
Otolaryngologia polska = The Polish otolaryngology [Otolaryngol Pol] 1998; Vol. 52 (4), pp. 475-7.