Zobrazeno 1 - 10
of 129
pro vyhledávání: '"R. R. Kunz"'
A simple micromachining approach to testing nanoscale metal–self-assembled monolayer–metal junctions
Autor:
T M Lyszczarz, M W Geis, T H Fedynyshyn, Michael Switkes, Steven J. Spector, Charles M. Wynn, R R Kunz, Mordechai Rothschild
Publikováno v:
Nanotechnology. 15:86-91
We present a 'flip chip' technique for testing electronic self-assembled monolayers (SAMs). Metal–SAM–metal junctions with contact areas of approximately (25 nm)2 and smaller have been created and tested. While the approach is similar in spirit t
Autor:
T. H. Fedynyshyn, J. Curtin, R. F. Sinta, Alberto Cabral, M. Sworin, R. R. Kunz, W. A. Mowers
Publikováno v:
ACS Symposium Series ISBN: 9780841238572
Polymers for Microelectronics and Nanoelectronics
Polymers for Microelectronics and Nanoelectronics
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a91530c0ea0116b4e7a86ae51572dc6b
https://doi.org/10.1021/bk-2004-0874.ch005
https://doi.org/10.1021/bk-2004-0874.ch005
Publikováno v:
Applied Physics Letters. 67:1766-1768
Nanocrystalline silicon aggregates imbedded in a predominantly amorphous silicon layer have been observed in anodically etched p‐Si(100) by using valence band x‐ray photoelectron spectroscopy and lattice imaged high‐resolution transmission elec
Publikováno v:
ACS Symposium Series ISBN: 9780841226623
Irradiation of Polymeric Materials: Processes, Mechanisms, and Applications
Irradiation of Polymeric Materials: Processes, Mechanisms, and Applications
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::300fa58e4667df29f5e7933902355e5c
https://doi.org/10.1021/bk-1993-0527.ch017
https://doi.org/10.1021/bk-1993-0527.ch017
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 21:78
Near-field contact exposures through a chromeless phase-shifting mask at 193 nm are used to create arbitrarily shaped structures as small as 45 nm on thin (∼10–15 μm) sheets of polyimide. The thin sheets make smooth, stable laminates on carrier
Autor:
R. R. Kunz, D. K. Downs
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 17:3330
Fourteen different 193 nm photoresists were tested for organic vapor outgassing after exposure and their outgassing rates were measured to be between 1011 and 1013 molecules cm−2 s−1, with the primary compounds being isobutene and benzylic photoa
Autor:
Qinghuang Lin, Raymond A. Pearson, Jeffrey C. Hedrick, Zhenan Bao, Kyungkon Kim, Guolun Zhong, Jung-Il Jin, Jung Ho Park, Seoung Hyun Lee, Dong Woo Kim, Yung Woo Park, Whikun Yi, M. E. van der Boom, T. J. Marks, Sung-Yeon Jang, Manuel Marquez, Gregory A. Sotzing, T. H. Fedynyshyn, W. A. Mowers, R. R. Kunz, R. F. Sinta, M. Sworin, A. Cabral, J. Curtin, Toshiro Itani, Hiroyuki Watanabe, Tamio Yamazaki, Seiichi Ishikawa, Naomi Shida, Minoru Toriumi, Ronald L. Jones, Vivek M. Prabhu, Darío L. Goldfarb, Eric K. Lin, Christopher L. Soles, Joseph L. Lenhart, Wen-li Wu, Marie Angelopoulos, Daniel A. Fischer, Sharadha Sambasivan, B. Voit, F. Braun, Ch. Loppacher, S. Trogisch, L. M. Eng, R. Seidel, A. Gorbunoff, W. Pompe, M. Mertig, Martin Brehmer, Lars Conrad, Lutz Funk, Dirk Allard, Patrick Théato, Anke Helfer, R. D. Miller, W. Volksen, V. Y. Lee, E. Connor, T. Magbitang, R. Zafran, L. Sundberg, C. J. Hawker, J. L. Hedrick, E. Huang, M. Toney, Q. R. Huang, C. W. Frank, H. C. Kim, C. Tyberg, J. Hedrick, E. Simonyi, S. Gates, S. Cohen, K. Malone, H. Wickland, M. Sankara
Autor:
T. M. Mayer, R. R. Kunz
Publikováno v:
AIP Conference Proceedings.
Selective area deposition of iron, chromium, and tungsten thin films via thermal decomposition of their respective carbonyls has been performed on electron beam deposited pre‐nucleated layers. The prenucleated layers were deposited either by gas ph
Publikováno v:
Topical Meeting on Microphysics of Surfaces, Beams and Adsorbates.
Direct materials processing by focused particle beams has received considerable attention in recent years. The electron beam, traditionally used for resist exposure in electron beam lithography applications, is among the candidates for direct materia
Autor:
T. M. Mayer, R. R. Kunz
Publikováno v:
MRS Proceedings. 75
A low energy, broad beam electron source was used to induce chemical reactions on surfaces. Electron beam energies were selected to maximize the emission of secondary electrons, for the purpose of determining if these low energy electrons contributed