Zobrazeno 1 - 10
of 10
pro vyhledávání: '"R. R. Kabulov"'
Publikováno v:
Applied Solar Energy. 58:40-45
Publikováno v:
Applied Solar Energy. 57:363-369
Autor:
R. R. Kabulov
Publikováno v:
Applied Solar Energy. 56:383-387
The paper presents a literature review of the latest achievements in the creation of highly efficient thin-film solar cells (SCs) based on multicomponent polycrystalline materials: semiconductors of the AIIBVI groups of the periodic table, cadmium te
Publikováno v:
Applied Solar Energy. 55:159-167
The light load current-voltage characteristics of a solar photovoltaic module based on amorphous hydrogenated silicon have been studied at different temperatures under conditions of natural solar illumination (Рrad = 870 ± 10 W/m2). It has been fou
Autor:
Farrux Akbarov, R. R. Kabulov
Publikováno v:
Современные тенденции развития физики полупроводников: достижения, проблемы и перспективы.
Publikováno v:
Applied Solar Energy. 52:61-67
The load characteristics of n-CdS/p-CdTe heterostructures were studied at different lighting levels with monochromatic light (λ = 632.8 nm) and white light with different spectra of radiation. It was established that the efficiency of conversation o
Publikováno v:
Semiconductors. 47:825-830
The possibility of developing injection photodiodes with a tunable/reconfigurable? photosensitivity spectrum in the spectral range of 500–800 nm based on an n-CdS/p-CdTe heterostructure is shown. It is established that such a structure in the short
Publikováno v:
Applied Solar Energy. 53:297-298
We have studied the electric current characteristics of a monocrystalline silicon solar cell (SC) at various solar radiation power levels from 0.05 kW/m2 to 1 kW/m2 (АМ1). It has been found that the energy efficiency of the SC increases from 9.5 to
Publikováno v:
physica status solidi (a). 118:577-589
The current–voltage (CVC) and spectral characteristics of photocurrent in thin-film a-Si:H p–i–n photocells are investigated theoretically and experimentally without and under action of reverse and forward bias voltages and analysed with weak a
Publikováno v:
Physica Status Solidi (a). 109:211-216
An investigation is made of p—i—n and p+—i—p+ structures of hydrogenated amorphous silicon with various contents of monosilane (SiH4) mixed with argon. The short-circuit current (Isc) and open-circuit voltage (Uoc) in dependence on the illumi