Zobrazeno 1 - 10
of 33
pro vyhledávání: '"R. Purlys"'
Autor:
Julionas Kalade, Pranas Juozas Zilinskas, Ringaudas Rinkunas, Andrius Poškus, Tadeus Lozovski, R. Purlys
Publikováno v:
Medžiagotyra, Vol 22, Iss 1, Pp 126-131 (2016)
When deposited on a surface, electric charge usually accumulates near the tips of surface irregularities, from where it can be transferred to nearby objects due to ionization of ambient air. The amount of transferred charge, the rate of charge transf
Autor:
Algirdas Mekys, Arvydas Juozapas Janavičius, R. Purlys, Žilvinas Norgėla, Saulius Daugėla, Ringaudas Rinkūnas
Publikováno v:
Latvian Journal of Physics and Technical Sciences, Vol 52, Iss 5, Pp 68-75 (2015)
The soft X-ray photons absorbed in the inner K, L, M shells of Si atoms produce photoelectrons and Auger electrons, thus generating vacancies, interstitials and metastable oxygen complexes. The samples of Czochralski silicon crystals covered with 0.1
Publikováno v:
Acta Physica Polonica A. 123:777-781
Publikováno v:
Journal of Electrostatics. 70:419-427
In this work, the insulating layer with a weakly conductive layer on its surface is charged with a needle electrode. The quantities that are measured and calculated are the transients of charging current and transferred charge. In addition, we calcul
Publikováno v:
Acta Physica Polonica A. 116:1076-1080
with electrons and electric dipole of atoms transitions can generate metastable vacancies, point defects, and induce chemical reactions. Usually, for point defects generation doses of gamma rays are used. We measured values of the Bragg reflections o
Publikováno v:
Acta Physica Polonica A. 114:779-790
We considered the reasons of superdiffusivity and measured profiles of boron and phosphorus in crystalline silicon at room temperature. The superdiffusivity or ultrafast diffusion of metastable vacancies at room temperature in Si crystal irradiated b
Publikováno v:
Acta Physica Polonica A. 112:55-68
We applied soft X-rays for investigation of dynamics of the Frenkel point defects in a Si crystal during its saturation with metastable vacancies with neighboring Si atoms in excited states produced in the lattice after ejection of the Auger electron
Publikováno v:
Acta Physica Polonica A. 109:159-170
We applied soft X-rays for investigation of dynamics of Frenkel point defects in a Si crystal during its saturation with metastable vacancies with neighboring Si atoms in excited states or vacancies with neighboring Si atoms in interstitial states pr
Publikováno v:
The European Physical Journal Applied Physics. 29:127-131
We discuss the properties of the nonlinear diffusion equation for the case of diffusion in excited systems. The diffusion coefficient is directly proportional to the concentration of impurities and depends on the time in a special way. For the descri
Publikováno v:
Acta Physica Polonica A. 104:459-467
We discuss the properties of the nonlinear diffusion equation for the case of diffusion in excited systems. The diffusion coefficient is directly proportional to the concentration of impurities and depends on time in a special way. For the descriptio