Zobrazeno 1 - 10
of 47
pro vyhledávání: '"R. Potemski"'
Publikováno v:
Journal of Electronic Materials. 23:659-667
Controlled oxygen incorporation in GaAs using Al-0 bonding based precursors, dimethyl aluminum methoxide (DMALO) and diethyl aluminum ethoxide (DEALO), is presented in this investigation. A comparison study of oxygen incorporation kinetics between no
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9087b3a428ecdeb9175ba07d5df60994
https://doi.org/10.1007/bf02653353
https://doi.org/10.1007/bf02653353
Publikováno v:
Journal of Crystal Growth. 124:318-325
Alternative metalorganic precursors can often yield improvements in the purity or changes in the growth behavior of the epitaxial layer. Diethyl gallium chloride ((C 2 H 5 ) 2 GaCl or DEGaCl) belongs to this class of source molecules and has been use
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::158b37db5fb2542c68f4eba4fa89e818
https://doi.org/10.1016/0022-0248(92)90478-2
https://doi.org/10.1016/0022-0248(92)90478-2
Publikováno v:
Journal of Electronic Materials. 21:341-346
Oxygen has always been considered to be a major contaminant in the organo-metallic vapor phase epitaxy (OMVPE) of Al x Ga1−x As. Oxygen incorporation has been invoked as a contributor to low luminescence efficiency, dopant compensation and degradat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a83e8e58697a7d91fd308d1ee4d7d608
https://doi.org/10.1007/bf02660464
https://doi.org/10.1007/bf02660464
Publikováno v:
Journal of The Electrochemical Society. 138:2789-2794
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6682d502c514a9387ac48e104ea86ee6
https://doi.org/10.1149/1.2086057
https://doi.org/10.1149/1.2086057
Publikováno v:
Journal of The Electrochemical Society. 138:1817-1826
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::15f216e9047c293f28d757f046b28828
https://doi.org/10.1149/1.2085879
https://doi.org/10.1149/1.2085879
Autor:
Thomas F. Kuech, John A. Lebens, Michael A. Tischler, Paul M. Solomon, Alexander Palevski, Mark S. Goorsky, Charles S. Tsai, R. Potemski, Kerry J. Vahala
Publikováno v:
Journal of Crystal Growth. 107:116-128
Many device structures benefit from the ability to selectively deposit epitaxial materials. Through the use of a masking material, such as Si3N4 or SiO2, on the substrate surface, patterns generated through standard lithographic procedures can be use
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d10dfc55ac08bba89f683fb4c1b1e3e7
https://doi.org/10.1016/0022-0248(91)90443-9
https://doi.org/10.1016/0022-0248(91)90443-9
Publikováno v:
Journal of Crystal Growth. 107:331-336
The MOVPE growth of GaAs in a hot-wall system has been investigated using diethylgallium chloride ((C 2 H 5 ) 2 GaCl, DEGaCl), AsH 3 and H 2 . Recent measurements have determined the vapor pressure of DEGaCl, and have also determined that DEGaCl is d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::25fa9c81d36b8ec5ef3edb1ffc0d1cb8
https://doi.org/10.1016/0022-0248(91)90479-o
https://doi.org/10.1016/0022-0248(91)90479-o
Publikováno v:
Journal of Electronic Materials. 19:277-281
The incorporation of carbon into GaAs grown by metal-organic vapor phase epitaxy has been studied through the addition of CH2I2, CH3I, HI and I2 to the growth ambient. The epitaxial GaAs was grown using Ga(CH3)3 and AsH3 in a low pressure reactor. Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c9e7fc3cb63e763d2f096fbf3d101c66
https://doi.org/10.1007/bf02733819
https://doi.org/10.1007/bf02733819
Publikováno v:
Journal of Crystal Growth. 99:324-328
Selective epitaxy is the laterally controlled growth of epitaxial material on a substrate. We have demonstrated the highly selective epitaxial growth of GaAs using diethyl gallium chloride or (C 2 H 5 ) 2 GaCl. No GaAs growth is observed on the maski
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa991d96c558bb1a118345a93cde0bf1
https://doi.org/10.1016/0022-0248(90)90537-u
https://doi.org/10.1016/0022-0248(90)90537-u
Publikováno v:
Sixth International Conference Metalorganic Vapor Phase Epitaxy.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::87c7d4bdda39db29b624a0e453d411f5
https://doi.org/10.1109/movpe.1992.664996
https://doi.org/10.1109/movpe.1992.664996