Výsledky vyhledávání - "R. Pierrisnard"

Nanometer scale patterning by scanning tunelling microscope assisted chemical vapour deposition

Autor: D. Tonneau, Vincent Bouchiat, R. Even, H. Dallaporta, V. I. Safarov, R. Pierrisnard, F. Marchi, P. Doppelt

Publikováno v: Microelectronic Engineering. 50:59-65

Single electron devices are of great interest for their possible replacement of transistors in memories. The key to the preparation of these components is the production of low capacitance dots, which requires a lithography step at nanometric scale.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::9c35d9ab56a7924507f687555bd594b0
https://doi.org/10.1016/s0167-9317(99)00265-8

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Deposition of nanoscale rhodium dots by STM assisted CVD

Autor: F. Marchi, D. Tonneau, P. Doppelt, Vincent Bouchiat, R. Even, V. I. Safarov, H. Dallaporta, R. Pierrisnard

Publikováno v: Le Journal de Physique IV. :Pr8-733

Direct patterning of nanometric metallic features is possible by local decomposition of gaseous molecules on a surface, induced by application of a pulse voltage on a STM tip while surface imaging. Decomposition reaction occurs above a threshold volt

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::61bea62c4faaf4b303a034b6291b577b
https://doi.org/10.1051/jp4:1999892

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Elaboration of silicon clusters by CVD of silane or laser ablation

Autor: F. Salvan, L. Masson, F. Thibaudau, Ph. Dumas, W. Marine, D. Tonneau, R. Pierrisnard, D. Albertini, H. Dallaporta, M. Ramonda

Publikováno v: Microelectronic Engineering. 30:443-446

Silicon clusters have been promoted by thermal decomposition of silane (SiH4) on silicon (111)-(7×7). The adsorption of silane molecule at room temperature has been studied and a mechanism for adsorption is proposed. The sticking coefficient at room

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::85ed35b7c957eb308640c1e7f722c36e
https://doi.org/10.1016/0167-9317(95)00283-9

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Self-assembled monolayers of decanethiol on Au(111)/mica

Autor: W. Blanc, Hubert Klein, C. Fauquet, Philippe Dumas, R. Pierrisnard

Publikováno v: The European Physical Journal B: Condensed Matter and Complex Systems
The European Physical Journal B: Condensed Matter and Complex Systems, 2000, 14 (2), pp.371-376. ⟨10.1007/s100510050141⟩
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The European Physical Journal B: Condensed Matter and Complex Systems, Springer-Verlag, 2000, 14 (2), pp.371-376. ⟨10.1007/s100510050141⟩

International audience; We report here a preparation for thin gold films on mica substrates. We have investigated the influence of the substrate temperature and the evaporation rate on the morphology of the films. After careful outgasing of the subst

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::73b72ab370442609d942fab7df6b4370
https://hal-amu.archives-ouvertes.fr/hal-01770307

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Growth Kinetics of Copper Films from Photoassisted CVD of Copperacetylacetonate

Autor: R. Pierrisnard, H. Dallaporta, D. Tonneau, Wladimir Marine

Publikováno v: Journal de Physique IV Proceedings
Journal de Physique IV Proceedings, EDP Sciences, 1995, 05 (C5), pp.C5-629-C5-635. ⟨10.1051/jphyscol:1995575⟩

Copper thin films have been deposited by thermal decomposition of copper acetylacetonate-oxygen mixtures. Copper films of high quality as observed by Auger Electron Spectroscopy (AES) have been obtained at temperatures as low as 300°C. Under UV illu

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8d1689e922170559619336a5fac5f6c4
https://hal.archives-ouvertes.fr/jpa-00253937

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CHEMICAL VAPOR DEPOSITION OF COPPER FOR MICROELECTRONIC DEVICES BASED ON SILICON

Autor: H. Dallaporta, R. Pierrisnard, Alain Cros, Z. Hammadi

Publikováno v: Journal de Physique IV Proceedings
Journal de Physique IV Proceedings, EDP Sciences, 1991, 02 (C2), pp.C2-889-C2-895. ⟨10.1051/jp4:19912106⟩

In this paper we present a study of copper CVD deposition on different types of substrates used for microelectronic devices. The influence of substrate temperature, pressure, flux and contamination effect of the gas phase has been determined to obtai

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d5e741492ac3fa098b695b8b49e9ff68
https://hal.archives-ouvertes.fr/jpa-00249784/file/ajp-jp4199102C2106.pdf

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Vacuum spectrophotometer for specular reflectance measurements at high temperature. Application to monocrystalline silicon

Autor: G. Chassaing, L Argeme, R. Pierrisnard, J.C. Francois

Publikováno v: Journal of Optics. 16:47-51

A spectrophotometer is described which allows specular reflectance measurements at near normal and oblique incidence (30-44-60-75 degrees ). The samples can be heated up to 800 degrees C. The spectral range extends from 0.22 to 6.0 mu m. Reflectivity

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0fdd5af039716ab5bf0eecac1e62ce7e
https://doi.org/10.1088/0150-536x/16/1/006

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Structural changes in AuxSi1-x alloy films under laser irradiation

Autor: J. Marfaing, Wladimir Marine, R. Pierrisnard, Alain Cros

Publikováno v: Applied Surface Science. 43:165-170

The Au x Si 1- x ( x = 0.34, 0.76) alloys have been prepared by electron beam evaporation under ultra-high vacuum conditions. Their morphologies, before and after laser irradiation, have been studied by transmission electron microscopy. Depending on

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::73bd276ee8f70d2e5752755462a987f6
https://doi.org/10.1016/0169-4332(89)90206-7

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Morphological Studies of Small Three-Dimensional Gold Clusters on Graphite by Scanning Tunnelling Microscopy

Autor: R. Pierrisnard, C. Claeys, C. Chapon, A. Humbert, C. R. Henry, S. Sangay

Publikováno v: Europhysics Letters (EPL). 10:533-536

Three-dimensional gold clusters deposited in UHV on clean natural graphite are imaged at the atomic level using scanning tunnelling microscopy (STM). After STM observation, the samples are characterized by transmission electron microscopy (TEM). The

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::72a4452af47a5878329244d2870ce5b6
https://doi.org/10.1209/0295-5075/10/6/005

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Etude de l'absorption optique du vanadium en couches minces interpretation par la theorie des bandes d'energie

Autor: G. Chassaing, R. Pierrisnard, M. Sigrist, P. Gravier

Publikováno v: Solid State Communications. 15:1613-1617

Resume On donne, entre 0,32 et 5,5 eV, l'absorption optique de couches minces de vanadium obtenue a partir de mesures de transmission et de reflexion. Ces couches ont ete preparees sous ultra-vide et etudiees in situ. On note la presence d'une large

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c13980f567d435f50e02e7ddcf3caa05
https://doi.org/10.1016/0038-1098(74)91196-x

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