Zobrazeno 1 - 10
of 115
pro vyhledávání: '"R. Pickenhain"'
Autor:
Sebastian Geburt, R. Pickenhain, Carsten Ronning, Marius Grundmann, Holger von Wenckstern, Stefan Müller, Florian Schmidt
Publikováno v:
physica status solidi (b). 251:937-941
Pulsed-laser deposited ZnO thin films were implanted with Ar-ions to generate intrinsic defects within the material. The defects created were analyzed by deep-level and optical deep-level transient spectroscopy. Deep-level defects with thermal activa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e647741083f70e00ceef0fff1778d7de
https://doi.org/10.1002/pssb.201451011
https://doi.org/10.1002/pssb.201451011
Publikováno v:
Solid-State Electronics. 92:40-46
We present an overview of implementation and application of low rate Deep-Level Transient Spectroscopy (LR-DLTS). In conventional DLTS the sensitivity of the capacitance meter must be chosen so low that the whole capacitance drift range between lowes
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc4e650f1534920720e4efc9264ee1cd
https://doi.org/10.1016/j.sse.2013.10.021
https://doi.org/10.1016/j.sse.2013.10.021
Publikováno v:
Solid-State Electronics. 75:48-54
Electronic defect states in a n -type conducting zinc oxide thin film sample were investigated by means of space charge spectroscopy focussing on levels in the midgap region as well as on hole traps. To overcome the experimental difficulties arising
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cad9acfab4e1b0c28b2dfd4fd36cc686
https://doi.org/10.1016/j.sse.2012.04.043
https://doi.org/10.1016/j.sse.2012.04.043
Autor:
Marius Grundmann, Wolfgang Skorupa, Gerhard Brauer, Florian Schmidt, Kerstin Brachwitz, Martin Ellguth, Matthias Schmidt, R. Pickenhain, Holger von Wenckstern
Publikováno v:
physica status solidi (b). 248:1949-1955
Electronic defects in nickel-doped zinc oxide thin films have been investigated by means of capacitance spectroscopy. The samples were grown by pulsed laser deposition on a-plane sapphire substrates. Nickel was introduced into the films (a) during gr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9b5336f0d44f78d38068957837407960
https://doi.org/10.1002/pssb.201046634
https://doi.org/10.1002/pssb.201046634
Publikováno v:
physica status solidi (b). 248:941-949
We have applied a special variant of optical DLTS to deep levels found in ZnO thin films. The optical emission rates of charge carriers from deep levels into a band have been measured over a range of photon energies from 0.7 to 3.0 eV and photoioniza
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c46256ce252b661b856f4b2766904254
https://doi.org/10.1002/pssb.201046244
https://doi.org/10.1002/pssb.201046244
Autor:
Thomas Lüder, Matthias Schmidt, R. Pickenhain, Wolfgang Skorupa, Marius Grundmann, Holger von Wenckstern, Florian Schmidt, Martin Ellguth, Gerhard Brauer
Publikováno v:
physica status solidi (b). 247:1220-1226
Defects in a nitrogen implanted and thermally annealed zinc oxide thin film (n-type conducting) and reference samples were studied. Space charge regions realised by fabrication of semitransparent palladium Schottky contacts enabled the application of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::44641b20396405914721ddd8fada5823
https://doi.org/10.1002/pssb.200945534
https://doi.org/10.1002/pssb.200945534
Autor:
Marius Grundmann, Holger von Wenckstern, R. Pickenhain, Gabriele Benndorf, Andreas Pöppl, Matthias Schmidt, Rolf Böttcher
Publikováno v:
physica status solidi (b). 255:1700670
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::162eaa31364ddf9314ca14b4bd6ffff3
https://doi.org/10.1002/pssb.201700670
https://doi.org/10.1002/pssb.201700670
Autor:
Heidemarie Schmidt, Karl Jug, Bruno K. Meyer, Viatcheslav A. Tikhomirov, Hilkka Saal, A. Börger, Klaus-Dieter Becker, Matthias Brandt, Alexander Lajn, Angelika Polity, Michael Lorenz, Michael Binnewies, Detlev M. Hofmann, Marius Grundmann, H. von Wenckstern, R. Pickenhain
Publikováno v:
Progress in Solid State Chemistry 37(2009), 153-172
In this contribution we review the impact of anionic and cationic substitutions on the electronic properties of bulk ZnO crystals, thin films and ZnO powders. p-type doping is discussed with focus on the anionic substitution of oxygen by nitrogen or
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::56e8664e817aefdcceff196183757f4a
https://doi.org/10.1016/j.progsolidstchem.2009.11.008
https://doi.org/10.1016/j.progsolidstchem.2009.11.008
Autor:
Marius Grundmann, R. Pickenhain, Heidemarie Schmidt, G. Biehne, Michael Lorenz, Matthias Brandt, G. Brauer, H. von Wenckstern
Publikováno v:
Superlattices and Microstructures 42(2007), 14-20
We have realized a p-type ZnO surface layer by N + ion implantation of a high quality ZnO wafer and subsequent annealing. The conduction type of this surface layer was revealed by scanning capacitance microscopy. Rectifying current–voltage characte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::625c6e0f8e806d0e19a5f6ff8c7fcf52
https://doi.org/10.1016/j.spmi.2007.04.014
https://doi.org/10.1016/j.spmi.2007.04.014