Zobrazeno 1 - 10
of 159
pro vyhledávání: '"R. Peña Sierra"'
Autor:
R. Peña-Sierra, Yazmin Mariela Hernández-Rodríguez, G. Romero Paredes, Samuel Tehuacanero-Cuapa
Publikováno v:
Key Engineering Materials. 834:49-54
The synthesis and characterization of porous ZnO films using a two stage process by thermal oxidation using a bilayer precursor film (ZnO/Zn) consisting of a Zn film covered with a ZnO nanofilm formed on quartz substrates is reported. The Zn films of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::562eba4192839f9caa9fbd864869c04b
https://doi.org/10.4028/www.scientific.net/kem.834.49
https://doi.org/10.4028/www.scientific.net/kem.834.49
Akademický článek
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Publikováno v:
Materials Science in Semiconductor Processing. 109:104914
The effects of sodium chloride (NaCl) or sodium hydroxide (NaOH) used to control the p-type conductivity of cuprous oxide Cu2O thin films by reactive thermal annealing (ReTA) at 550 °C in low oxygen content applied to NaX/Cu2O (X = Cl or OH) bilayer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fd0721b9d27d51ec2e17fb30d1e0035c
https://doi.org/10.1016/j.mssp.2020.104914
https://doi.org/10.1016/j.mssp.2020.104914
Publikováno v:
Materials Science in Semiconductor Processing. 40:533-538
Porous silicon films obtained by the metal-assisted vapor-chemical etching technique have been characterized. For the film formation, epitaxial (100) N/P+, 1–5 Ω cm monocrystalline silicon wafers were used. The vapors of an alcoholic solution of H
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e75ab0b1b696df60882a199830213e74
https://doi.org/10.1016/j.mssp.2015.07.024
https://doi.org/10.1016/j.mssp.2015.07.024
Autor:
G. Juárez Díaz, J. Martinez-Juarez, P. López Salazar, R. Peña-Sierra, J. I. Contreras-Rascon, J. Díaz-Reyes
Publikováno v:
Mexican Journal of Materials Science and Engineering, Vol 1, Iss 2, Pp 35-39 (2014)
In this work we report the results of structural and electrical characterization realized on zinc oxide single crystal samples with (001) orientation, which were doped with antimony. Doping was carried out by antimony thermal diffusion at 1000 °C
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doajarticles::18dc056513aa991ed14f12499cdd0a07
http://intranet.matematicas.uady.mx/mjmatse/volumenes/volumen1/2/MJMATSE_1_2_35.pdf
http://intranet.matematicas.uady.mx/mjmatse/volumenes/volumen1/2/MJMATSE_1_2_35.pdf
Autor:
O. Goiz, M. Soledad-Priego, Arturo Morales-Acevedo, C. Felipe, F. Chávez, R. Peña-Sierra, P. Zaca-Morán, G. F. Pérez-Sánchez
Publikováno v:
Applied Surface Science. 275:28-35
In this work, we show a simple way to functionalize tungsten oxide nanowires (WO3-NWs) using a saturated palladium chloride (PdCl2) solution deposited by a drop-casting method. WO3-NWs were synthesized by close-spaced chemical vapor deposition (CSVT)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fdff602602cf1059b3b8840470c95d23
https://doi.org/10.1016/j.apsusc.2013.01.145
https://doi.org/10.1016/j.apsusc.2013.01.145
Publikováno v:
Instituto Politécnico Nacional
IPN
Redalyc-IPN
Revista Mexicana de Física (México) Num.1 Vol.62
IPN
Redalyc-IPN
Revista Mexicana de Física (México) Num.1 Vol.62
"The fabrication and characterization of electroluminescent ZnO:Zn(n+)/Porous Silicon/Si(p) heterojunctions is presented. Highly conductiveZnO films (ZnO:Zn(n+)) were produced by applying a temperature annealing at 400±C by 5 min to the ZnO/Zn/ZnO a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______3056::1a17507be070d417f0ec73d7b73fdc6d
https://www.redalyc.org/articulo.oa?id=57042601002
https://www.redalyc.org/articulo.oa?id=57042601002
Publikováno v:
Materials Science and Engineering: B. 176:1349-1352
The paper presents the transformation of photoluminescence (PL) spectra of nonconjugated and bioconjugated core/shell CdSe/ZnS QDs covered by PEG polymer at the aging in ambient air. Studied QDs are characterized by the sizes: (i) 3.6–4.0 nm and co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::44054c673335ac7074b3768d5f05eb66
https://doi.org/10.1016/j.mseb.2011.05.007
https://doi.org/10.1016/j.mseb.2011.05.007
Publikováno v:
Vacuum. 84:1182-1186
We present the electrical and structural characterization of Al x Ga 1− x As layers grown in a metallic-arsenic-based-MOCVD system. The gallium and aluminium precursors were the metal-organic compounds trimethylgallium (TMGa) and trimethylaluminium
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ee76d7d019c9a561a71916aa64eebacf
https://doi.org/10.1016/j.vacuum.2009.10.021
https://doi.org/10.1016/j.vacuum.2009.10.021
Publikováno v:
Vacuum. 84:1195-1198
Ohmic contacts with a palladium (Pd) diffusion barrier were formed on GaAs substrates. The metal-contact structure consists of a gold-based-alloy/Pd/semiconductor-substrate. Characteristics of the deposited Pd films by “electroless” deposition on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8d568c20e1d0f4bce4139a46c421be5d
https://doi.org/10.1016/j.vacuum.2009.10.024
https://doi.org/10.1016/j.vacuum.2009.10.024