Zobrazeno 1 - 10
of 20
pro vyhledávání: '"R. Pazirandeh"'
Autor:
Trevor Martin, Anders Lundskog, Galia Pozina, David J. Wallis, Anelia Kakanakova-Georgieva, R. Lossy, Michael J. Uren, Erik Janzén, Martin Kuball, Joachim Würfl, J.O. Maclean, K.P. Hilton, James W Pomeroy, Gernot Riedel, R. Pazirandeh, Urban Forsberg, Frank Brunner
Publikováno v:
IEEE Electron Device Letters. 30:103-106
Currently, up to 50% of the channel temperature in AlGaN/GaN electronic devices is due to the thermal-boundary resistance (TBR) associated with the nucleation layer (NL) needed between GaN and SiC substrates for high-quality heteroepitaxy. Using 3-D
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5799ab49207b6591a6b824be0b6ebf30
https://doi.org/10.1109/led.2008.2010340
https://doi.org/10.1109/led.2008.2010340
Publikováno v:
Europhysics Letters (EPL). 47:384-390
The target KVV Auger-electron emission has been investigated experimentally and theoretically for heavy-ion irradiation of amorphous carbon at an ion velocity of 14.1 atomic units (5 MeV/u). We present experimental evidence for an influence of the ta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c1956e209fb89078fb561416a2c52289
https://doi.org/10.1209/epl/i1999-00400-0
https://doi.org/10.1209/epl/i1999-00400-0
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 146:131-136
In this work we present carbon K-Auger electron spectra from amorphous carbon foils induced by fast heavy ions and by electrons. The high-energy tail of the experimentally determined Auger structure shows a clear projectile-charge dependence. Model e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b2c538206dcc75cdd5cca9de8d640de
https://doi.org/10.1016/s0168-583x(98)00432-7
https://doi.org/10.1016/s0168-583x(98)00432-7
Publikováno v:
[Reliability of Compound Semiconductors] ROCS Workshop 2006.
The usage of electroluminescence for investigating the reliability of GaAs based HBTs has been reported previously (Henderson, 1995, Harris et al., 1998). Electroluminescence is the emission of photons generated by recombination of electrons and hole
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::edfccce40da9e46a65c412a7d697afcf
https://doi.org/10.1109/rocs.2006.323411
https://doi.org/10.1109/rocs.2006.323411
Publikováno v:
Springer Proceedings in Physics ISBN: 9783540319146
Degraded heterojunction bipolar transistors were characterized regarding their structural and chemical properties by transmission electron microscopy. Electron transparent cross-sections of the HBTs were prepared applying the focused ion beam techniq
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::048a53036539c91ec44262da543e15da
https://doi.org/10.1007/3-540-31915-8_92
https://doi.org/10.1007/3-540-31915-8_92
Publikováno v:
2004 IEEE International SOI Conference (IEEE Cat. No.04CH37573).
The reliability of InGaP/GaAs HBTs has been investigated widely. In order to understand the degradation mechanism, degraded HBTs were analysed in TEM and the diffusion behaviour of elements was investigated with EDXS. Dislocations were observed havin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a01a330f947bc70f57c4b368294fe1b
https://doi.org/10.1109/csics.2004.1392493
https://doi.org/10.1109/csics.2004.1392493
Autor:
W. Roepke, Bernd Heinemann, D. Knoll, B. Hunger, F. Fuernhammer, K.-E. Ehwald, R. Barth, H. Rucker, Wolfgang Winkler, R. Pazirandeh, N. Ilkov, H.-E. Wulf
Publikováno v:
International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).
We demonstrate high performance RF LDMOS transistors integrated into an advanced industrial 0.25 /spl mu/m BiCMOS process with only one additional mask level. These devices have minimum 0.25 /spl mu/m physical gate lengths, use the 5 nm standard gate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c7edb9bae9722cddacfe342a792666c0
https://doi.org/10.1109/iedm.2001.979657
https://doi.org/10.1109/iedm.2001.979657
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