Zobrazeno 1 - 10
of 24
pro vyhledávání: '"R. P. S. Thakur"'
Publikováno v:
Journal of Applied Physics. 70:3857-3861
Rapid isothermal processing (RIP) based on incoherent sources of light is emerging as a reduced thermal budget (product of processing time and temperature) processing technique. As compared to stand alone annealing unit, the in situ RIP unit is very
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fff5bf15fe59f9df3fa52af576fdc408
https://doi.org/10.1063/1.349191
https://doi.org/10.1063/1.349191
Autor:
Rajiv K. Singh, Sujeet K. Sinha, Jagdish Narayan, J. T. C. Ng, R. P. S. Thakur, P. Chou, N. J. Hsu
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 9:401-404
Metalorganic chemical vapor deposition (MOCVD) has the potential of emerging as a viable technique to fabricate ribbons, tapes, coated wires, and the deposition of films of high temperature superconductors, and related materials. As a reduced thermal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c3553a31ec508676a63c30005539f0bd
https://doi.org/10.1116/1.577421
https://doi.org/10.1116/1.577421
Autor:
J. T. C. Ng, R. P. S. Thakur, Rajiv K. Singh, N. J. Hsu, P. Chou, Sujeet K. Sinha, Jagdish Narayan
Publikováno v:
Journal of Applied Physics. 69:2418-2422
Metalorganic chemical vapor deposition (MOCVD) has the potential of emerging as a viable technique to fabricate ribbons, tapes, coated wires, and the deposition of films of high‐temperature superconductors, and related materials. As a reduced therm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6408dc029d5d5ffd0c9b19de6fe53c07
https://doi.org/10.1063/1.348675
https://doi.org/10.1063/1.348675
Autor:
Art J. Nelson, Rajendra Singh, Jharna Chaudhuri, R. P. S. Thakur, H. S. Ullal, V. Gondhalekar
Publikováno v:
Journal of Applied Physics. 69:367-371
Annealing experiments were carried out on phosphosilicate glass (PSG) films deposited on (100) silicon substrates by using a low‐pressure chemical vapor deposition technique. Rapid isothermal processing and conventional furnace heating were used to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b70f7500c8ca7f6cbc39d0a4dfbc978b
https://doi.org/10.1063/1.347723
https://doi.org/10.1063/1.347723
Publikováno v:
Journal of Electronic Materials. 19:1061-1064
As a low thermal budget processing technique, we have used in-situ rapid isothermal processing for growing epitaxial CaF2 films on Si (111) substrates by solid phase epitaxy. Ex-situ rapid isothermal annealed films are polycrystalline in nature. Abso
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::04db329d88e419dbb7c527105683e09c
https://doi.org/10.1007/bf02651982
https://doi.org/10.1007/bf02651982
Publikováno v:
Journal of Applied Physics. 67:6411-6414
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4bfd887b9e62a1038a556c7c5ded1ebd
https://doi.org/10.1063/1.345165
https://doi.org/10.1063/1.345165
Autor:
Art J. Nelson, R. P. S. Thakur, Ashok Kumar, Rajendra Singh, P. Chou, H. S. Ullal, Jagdish Narayan
Publikováno v:
Journal of Electronic Materials. 19:481-485
In general, during the deposition of epitaxial dielectrics, the substrate is heated at elevated temperatures, which is undesirable for a number of applications. In this paper we report the use of in-situ rapid isothermal processing for the solid phas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e53d679bb9f2090df2e13cb2eae8a3d
https://doi.org/10.1007/bf02658009
https://doi.org/10.1007/bf02658009
Autor:
R. P. S. Thakur, C. Turner
Publikováno v:
Applied Physics Letters. 65:2809-2811
We studied low pressure chemical vapor deposition of in situ arsenic‐doped silicon films using a standard vertical thermal reactor. The films were deposited as a stack of doped and undoped layers for a targeted thickness. The redistribution of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bbaa8998a1dfab49e22a4ebbcff28f5d
https://doi.org/10.1063/1.112573
https://doi.org/10.1063/1.112573
Publikováno v:
Applied Physics Letters. 64:3428-3430
We have studied the effects of initial wafer bow and warpage on the integrity of thinner gate oxides grown by both furnace and rapid thermal processing (RTP) methods. There is evidence of a correlation between wafer warpage and bow to the charge‐to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5358dd9a3bd60cba6ebf88e636704be1
https://doi.org/10.1063/1.111231
https://doi.org/10.1063/1.111231
Autor:
J. W. Kolis, A. A. Ogale, J. Harriss, J. Mavoori, Rajiv K. Singh, R. P. S. Thakur, K. F. Poole, M. A. Wait
Publikováno v:
Applied Physics Letters. 64:3234-3236
There are fundamental differences between conventional furnace processing (CFP) and rapid isothermal processing (RIP). The radiation spectrum of a conventional furnace consists of photons in the infrared and longer wavelength regions, whereas the spe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a58860933f2ac4978ea21333cf27fe5f
https://doi.org/10.1063/1.111320
https://doi.org/10.1063/1.111320