Zobrazeno 1 - 10
of 86
pro vyhledávání: '"R. P. Moerkirk"'
Autor:
Sezai Elagoz, Melanie W. Cole, H. S. Lee, W. H. Chang, R. P. Moerkirk, D. W. Eckart, S. N. Schauer, R. T. Lareau, Kenneth A. Jones, Roy Clarke, D. C. Fox, W. Vavra
Publikováno v:
Journal of Applied Physics. 72:4773-4780
The microstructure and electrical properties of nonalloyed epitaxial Au‐Ge contacts were studied. Ohmic behavior was obtained after a 3 h anneal at 320 °C with the lowest average contact resistance and specific contact resistivity found to be ∼0
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5c66e98dabfa8e8f4560971acd3664a3
https://doi.org/10.1063/1.352089
https://doi.org/10.1063/1.352089
Autor:
L. Calderon, H. S. Lee, L. W. Yang, R. P. Moerkirk, W. Y. Han, J. R. Flemish, Kenneth A. Jones, Yicheng Lu, S. N. Schauer
Publikováno v:
Applied Physics Letters. 62:2578-2580
Two heavily carbon doped InGaAs samples (2.20×1019 and 1.92×1019 cm−3) with low In mol fractions (1% and 8%) were annealed with or without silicon nitride caps in H2 containing 0.3% AsH3 over the temperature range 5000–800 °C. Hall effect, sec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c90ca0cb6a6fb74c9f91d1b3ad81a5e2
https://doi.org/10.1063/1.109302
https://doi.org/10.1063/1.109302
Autor:
R. P. Moerkirk, Melanie W. Cole, Yicheng Lu, S. N. Schauer, W. Y. Han, H. S. Lee, L. W. Yang, Kenneth A. Jones
Publikováno v:
Applied Physics Letters. 61:87-89
The hole concentrations and lattice mismatch with the GaAs substrate of heavily carbon‐doped epilayers (4.7×1019 and 9.8×1019 cm−3) were increased and the mobilities were decreased as compared with the as‐grown samples by rapid thermal anneal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c90b8b68c8f18cc4bcc8a987e001616a
https://doi.org/10.1063/1.107622
https://doi.org/10.1063/1.107622
Autor:
Doyoon Kim, P. Paul Ruden, Michael A. Stroscio, R. P. Moerkirk, Hongen Shen, M. I. Nathan, Mitra Dutta, Ki-Woong Chung, W. H. Chang
Publikováno v:
Applied Physics Letters. 60:2400-2402
We report the first photoreflectance measurement of strain‐induced piezoelectric field in a (111)B InGaAs/GaAs structure. The InGaAs quantum well was pseudomorphically grown in the undoped regions of a GaAs undoped–heavily doped structure. Four s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3a234daa5bdcad14f8ffe7fd23022d43
https://doi.org/10.1063/1.106985
https://doi.org/10.1063/1.106985
Publikováno v:
Applied Physics Letters. 58:1533-1535
Recently, experimental evidence has revealed that the energy distribution of the dark current in a typical multiple quantum well GaAs infrared detector is extremely broad, in contrast to the narrowly distributed photocurrent. In this letter, we prese
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ec792e032c321bde696e2ae95660260
https://doi.org/10.1063/1.105169
https://doi.org/10.1063/1.105169
Autor:
Hongen Shen, R. N. Sacks, L. Fotiadis, Peter G. Newman, W. H. Chang, Mitra Dutta, R. P. Moerkirk
Publikováno v:
Applied Physics Letters. 57:2118-2120
Franz–Keldysh oscillations from GaAs and AlGaAs structures have been studied and we find that the electric field obtained from the oscillations is in agreement with that derived from electrostatic calculations. Our results show that illumination fr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6914da2e84e6405d5091a737fb8306e0
https://doi.org/10.1063/1.103916
https://doi.org/10.1063/1.103916
Autor:
Sezai Elagoz, H. S. Lee, R. T. Lareau, Roy Clarke, S. N. Schauer, W. Va Vra, R. P. Moerkirk, Kenneth A. Jones
Publikováno v:
MRS Proceedings. 240
A SIMS backside sputter depth-profile technique using marker layers is employed to characterize the diffusion profiles of the Ge, As, and Au in the Au-Ge contacts after annealing at 320 C for various times. This technique overcomes difficulties such
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6571c4e571ea21b83b91e4f01cc1da5e
https://doi.org/10.1557/proc-240-473
https://doi.org/10.1557/proc-240-473
Autor:
Odagawa, Takeshi, Yamamoto, Sota, Zhang, Chaoliang, Koyama, Kazuki, Ishihara, Jun, Mariani, Giacomo, Kunihashi, Yoji, Sanada, Haruki, Nitta, Junsaku, Kohda, Makoto
Publikováno v:
APL Materials; Jun2024, Vol. 12 Issue 6, p1-8, 8p
Publikováno v:
Journal of Applied Physics; Jul2011, Vol. 110 Issue 1, p013515, 6p, 6 Graphs
Publikováno v:
Journal of Applied Physics; May2009, Vol. 105 Issue 9, p093539-093543, 4p, 3 Graphs