Zobrazeno 1 - 10
of 19
pro vyhledávání: '"R. P. Donovan"'
Publikováno v:
Land, Vol 4, Iss 2, Pp 513-540 (2015)
Human appropriation of net primary production (HANPP) quantifies alteration of the biosphere caused by land use change and biomass harvest. In global and regional scale assessments, the majority of HANPP is associated with agricultural biomass harves
Externí odkaz:
https://doaj.org/article/73fd9a98c5244323bdde2bd2e137f2a6
Publikováno v:
Geologia Croatica, Vol 52, Iss 2, Pp 203-215 (2010)
Typical morphological elements for impact craters were detectedon all analyzed Shuttle photographs. Features with diameters smallerthan 2 km could not be successfully analyzed. The search for suitableShuttle scenes was successfully performed using on
Externí odkaz:
https://doaj.org/article/12ca0135d1dc45f3b48223707b3e67a2
Autor:
D. E. Heard, K. A. Read, J. Methven, S. Al-Haider, W. J. Bloss, G. P. Johnson, M. J. Pilling, P. W. Seakins, S. C. Smith, R. Sommariva, J. C. Stanton, T. J. Still, T. Ingham, B. Brooks, G. De Leeuw, A. V. Jackson, J. B. McQuaid, R. Morgan, M. H. Smith, L. J. Carpenter, N. Carslaw, J. Hamilton, J. R Hopkins, J. D. Lee, A. C. Lewis, R. M. Purvis, D. J. Wevill, N. Brough, T. Green, G. Mills, S. A. Penkett, J. M. C. Plane, A. Saiz-Lopez, D. Worton, P. S. Monks, Z. Fleming, A. R. Rickard, M. R. Alfarra, J. D. Allan, K. Bower, H. Coe, M. Cubison, M. Flynn, G. McFiggans, M. Gallagher, E. G. Norton, C. D. O'Dowd, J. Shillito, D. Topping, G. Vaughan, P. Williams, M. Bitter, S. M. Ball, R. L. Jones, I. M. Povey, S. O'Doherty, P. G. Simmonds, A. Allen, R. P. Kinnersley, D. C. S. Beddows, M. Dall'Osto, R. M. Harrison, R. J. Donovan, M. R. Heal, S. G. Jennings, C. Noone, G. Spain
Publikováno v:
Atmospheric Chemistry and Physics, Vol 6, Iss 8, Pp 2241-2272 (2006)
The North Atlantic Marine Boundary Layer Experiment (NAMBLEX), involving over 50 scientists from 12 institutions, took place at Mace Head, Ireland (53.32° N, 9.90° W), between 23 July and 4 September 2002. A wide range of state-of-the-art instrumen
Externí odkaz:
https://doaj.org/article/972ff1a0c7ed40fcb1ffa856f3dad702
Autor:
R. P. Donovan
This chapter addresses the importance to wafer processing for the calculations of particle deposition velocity and the supporting measurements carried out in carefully controlled laboratory deposition apparatus. In the absence of electrical or therma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::df3fae76d3c9769f8de1454ad3415e2b
https://doi.org/10.1201/9780203744307-19
https://doi.org/10.1201/9780203744307-19
Autor:
R. P. Donovan
Publikováno v:
Particle Control for Semiconductor Manufacturing
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ceb350582b746a3077fd46d5fa391ea
https://doi.org/10.1201/9780203744307-14
https://doi.org/10.1201/9780203744307-14
Publikováno v:
MRS Online Proceedings Library. 315:3-22
Physical forces control particle deposition on wafers in virtually all manufacturing environments: open air, liquid baths, and subatmospheric chambers. Physical forces also often dominate particle adhesion and removal. In aerosol systems, gravity and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d82bbd06c5f5b509efd6d9bc5524f910
https://doi.org/10.1557/proc-315-3
https://doi.org/10.1557/proc-315-3
Publikováno v:
IEEE Transactions on Nuclear Science. 24:2336-2340
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::03d02ea28f596eea11e2ee7bf2aeea31
https://doi.org/10.1109/tns.1977.4329217
https://doi.org/10.1109/tns.1977.4329217
Publikováno v:
IEEE Transactions on Nuclear Science. 16:203-206
Implantation of thermal oxide on silicon with 1016 N2+ cm-2 at an energy of 50 keV reduces the space charge buildup observed in the oxide when exposed subsequently to ionizing radiation. The component of radiation-induced charge buildup in the oxide
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::90314719ee5e379ce087e388f3a2bf3c
https://doi.org/10.1109/tns.1969.4325527
https://doi.org/10.1109/tns.1969.4325527
Autor:
M. Simons, R. P. Donovan
Publikováno v:
Journal of Applied Physics. 43:2897-2899
High‐energy implantation of various ions into thermal oxides on silicon renders these oxides less sensitive to charge buildup when subsequently exposed to ionizing radiation. The reduced sensitivity is primarily a reduction in bias dependence and i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b2f97720f12eea3cd16957e0ff950152
https://doi.org/10.1063/1.1661615
https://doi.org/10.1063/1.1661615