Zobrazeno 1 - 3
of 3
pro vyhledávání: '"R. P Jaeger"'
Publikováno v:
SPIE Proceedings.
X-ray lithography has been applied in a single-layer resist process to fabricate n-channel enhancement field-effect transistors with effective channel lengths (L eff ) and channel widths (We ff ) as small as small as 0.9 Lim and 0.5 Lim, respectively
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::db52a844c5013e28959857081525fc42
https://doi.org/10.1117/12.947488
https://doi.org/10.1117/12.947488
Autor:
R. P Jaeger, B L Heflinger
Publikováno v:
SPIE Proceedings.
The penumbral shadow has been recognized as the resolution- limiting parameter in x-ray lithography. In the present study, the exposure of resist with monochromatic (2.84 keV) x-rays and an experimental palladium spectrum is simulated for various val
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::48502cd632569d5f4e9e21eeced3afd1
https://doi.org/10.1117/12.942336
https://doi.org/10.1117/12.942336
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 3:245
X‐ray lithography exposures of PMMA on silicon have been simulated with a Monte–Carlo method including the energy backscattering from the substrate. The line‐edge acuity of the resist image has been modeled with experimentally determined x‐ra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eab700c2d8a655cc3dc6a5dcd54122c8
https://doi.org/10.1116/1.583237
https://doi.org/10.1116/1.583237