Zobrazeno 1 - 5
of 5
pro vyhledávání: '"R. O. Askerov"'
Autor:
M. A. Aliev, E. N. Kozyrev, V. I. Filonenko, I. N. Goncharov, R. O. Askerov, T. M. Gadzhiev, B. A. Bilalov, A. R. Aliev, A. M. Ismailov
Publikováno v:
Journal of Communications Technology and Electronics. 63:936-940
Photosensitive polycrystalline CuIn0.95Ga0.05Se2 thin films have been formed on glass, aluminum, and nanoporous Al/Al2O3 substrates by means of two-step selenization in a gas (nitrogen) flow carrying a reaction component (selenium). The structural pr
Publikováno v:
Journal of Communications Technology and Electronics. 61:82-85
Possible reasons for decomposition of the emission layer of working electroluminescence structures that cause a decrease in the working time are considered. Results of a multifactor experiment aimed at a search for the optimal composition of suspensi
Autor:
A. R. Manukyants, T. N. Belyaeva, R. O. Askerov, E. N. Kozyrev, P. K. Korotkov, V. I. Filonenko
Publikováno v:
Glass and Ceramics. 74:230-232
The results of an investigation into the production of porous aluminum oxide, which is a typical self-organized material, by anodic oxidation of aluminum in acid solutions are presented. The functional dependences of the impact of the formation condi
Autor:
R. M. Gadjieva, R K Arslanov, M. A. Aliev, A. Sh. Asvarov, Kh. Kh. Kalazhokov, A. M. Ismailov, R. O. Askerov, V. I. Filonenko, T. M. Gadjiev, E. N. Kozyrev, Z. Kh. Kalazhokov
Publikováno v:
Journal of Physics: Conference Series. 872:012041
A technology of two stage selenezation method in the carrier gas (nitrogen) stream of the reaction component (selenium) has been suggested for the CuIn0.95Ga0.05Se2 thin film growing. Morphology and structure of the CuIn0.95Ga0.05Se2 film have been s
Autor:
Kh Kh Kalazhokov, Z Kh Kalazhokov, T M Gadjiev, M A Aliev, A M Ismailov, R M Gadjieva, A Sh Asvarov, R K Arslanov, E N Kozyrev, V I Filonenko, R O Askerov
Publikováno v:
Journal of Physics: Conference Series; 2017, Vol. 872 Issue 1, p1-1, 1p