Zobrazeno 1 - 1
of 1
pro vyhledávání: '"R. Nait Youcef"'
Autor:
Benoit Sklenard, Joris Lacord, D. Lattard, R. Nait Youcef, Xavier Garros, A. Tataridou, Francois Andrieu, Claire Fenouillet-Beranger, F. Balestra, Sylvain Barraud, Perrine Batude, G. Audoit, Mikael Casse, D. Bosch, J. Lugo, Christoforos G. Theodorou, Laurent Brunet, J.-P. Colinge, J. Cluzel, F. Allain, C. Vizioz, J.M. Hartmann
Publikováno v:
2020 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)
2020 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), Aug 2020, Hsinchu, Taiwan. pp.126-127, ⟨10.1109/VLSI-TSA48913.2020.9203690⟩
2020 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), Aug 2020, Hsinchu, Taiwan. pp.126-127, ⟨10.1109/VLSI-TSA48913.2020.9203690⟩
We fabricated junction less and inversion-mode monocrystalline nanowire nMOSFETs down to L=18nm gate length and W=20nm width. We demonstrate record performance of nanowire junction less transistors for analog applications: $A_{VT}=1.4mV \cdot \mu$ m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::22aa19246805ca5305905064aa067feb
https://hal.science/hal-02969748/file/vlsi_tsa_BOSCH_HAL.pdf
https://hal.science/hal-02969748/file/vlsi_tsa_BOSCH_HAL.pdf
