Zobrazeno 1 - 10
of 55
pro vyhledávání: '"R. N. Sacks"'
Publikováno v:
Journal of Electronic Materials. 27:900-907
The nucleation and growth of GaAs films on offcut (001) Ge wafers by solid source molecular beam epitaxy (MBE) is investigated, with the objective of establishing nucleation conditions which reproducibly yield GaAs films which are free of antiphase d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::962123229c03df6feb56c15bcdd7c62f
https://doi.org/10.1007/s11664-998-0116-1
https://doi.org/10.1007/s11664-998-0116-1
Publikováno v:
IEEE Photonics Technology Letters. 18:1898-1900
We discuss a new simple InGaAs-InAlAs avalanche photodiode (APD) with a planar buried multiplication region. Some of the advantages compared to standard APDs are as follows: 1) The thickness of the avalanche and the charge control regions are accurat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::07f8a388b958e75ea4368f7aafb5ebb5
https://doi.org/10.1109/lpt.2006.881684
https://doi.org/10.1109/lpt.2006.881684
Publikováno v:
Journal of Crystal Growth. :256-261
The alloy system In 0.525 (Al x Ga 1-x ) 0.475 As, which is lattice-matched to InP, covers the technologically important wavelength range 0.8-1.6 μm, including the fiber optic communication wavelengths 1.3 and 1.55 μm. However, growth of these allo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cfc6d77acea0a04c8cb04845c4c3061a
https://doi.org/10.1016/s0022-0248(96)00939-6
https://doi.org/10.1016/s0022-0248(96)00939-6
Publikováno v:
Journal of Crystal Growth. :66-71
A novel PBN crucible has allowed the design of a new high-capacity Ga source incorporating a unique heat shielding cap. The extra heat shielding at the front of the source allows hot lip operation with considerably lower power than for previous desig
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::707a30444b720fe27578628c9e2056fe
https://doi.org/10.1016/s0022-0248(96)01025-1
https://doi.org/10.1016/s0022-0248(96)01025-1
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 14:3283-3287
Large substrate surface temperature decreases are observed during molecular beam epitaxy growth onto small indium bonded substrates, due to coating of the molybdenum block. These large temperature transients, along with other difficulties associated
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::03462f4b43fab6cda2b606317ff792ff
https://doi.org/10.1116/1.580227
https://doi.org/10.1116/1.580227
Publikováno v:
Surface Science. :537-541
We have studied electron heating in a 2DEG in GaAs/AlGaAs heterojunctions below 0.5 K. The electron temperature was raised above the lattice temperature using Joule heating. Weak localization and the temperature-dependent sample resistance were used
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::42aea2b8d0bf1c4a0547d9ba738c2cce
https://doi.org/10.1016/0039-6028(96)00464-5
https://doi.org/10.1016/0039-6028(96)00464-5
Autor:
R. N. Sacks, R. G. Wheeler, Daniel E. Prober, J. W. Sleight, H. Shtrikmann, Anurag Mittal, Mark W. Keller
Publikováno v:
Physical Review B. 53:R1693-R1696
We have fabricated ballistic cavities from a two-dimensional GaAs electron gas in which the Fermi energy can be varied independent of cavity shape. For each cavity, we have measured the magnetoconductance $G(B)$ of many individual members of an ensem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::75af0ee2a695de9f5377be52bb4db2e5
https://doi.org/10.1103/physrevb.53.r1693
https://doi.org/10.1103/physrevb.53.r1693
Publikováno v:
Surface Science. 305:501-506
We have measured the resistance versus magnetic field and Fermi energy for two stadium-shaped cavities in which chaotic scattering is expected. We fit the power spectra of the magnetoresistance fluctuations to semiclassical chaotic scattering theory
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a9bf60a8204778c26501f1f2384a7a38
https://doi.org/10.1016/0039-6028(94)90943-1
https://doi.org/10.1016/0039-6028(94)90943-1
Autor:
Hongen Shen, R. N. Sacks, Peter G. Newman, Weimin Zhou, Doran D. Smith, Mitra Dutta, Jagadeesh Pamulapati
Publikováno v:
Physical Review B. 48:5256-5260
Low-temperature (4.2 K) magnetoreflectance measurements have been performed on a series of In x Ga 1-x As/Al y Ga 1-y As strained-layer quantum wells (QW's) with the InAs mole fraction x varying from 0 to 0.2, for three different well widths, and for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::060d602231ec4546f487cc8f65d0c8ad
https://doi.org/10.1103/physrevb.48.5256
https://doi.org/10.1103/physrevb.48.5256
Publikováno v:
Solid State Communications. 84:51-55
We have investigated the effects of large uniaxial stress (⇀T) along [100] (≈10 kbar) and [110] (≈16 kbar) on the photoreflectance spectra at 300K of a (001) GaAs/Ga0.73Al0.27As single quantum well structure. For ⇀T‖[100] the stress-induced
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ce0f09dd293294bab0bb14a6dd09ef5
https://doi.org/10.1016/0038-1098(92)90293-i
https://doi.org/10.1016/0038-1098(92)90293-i