Zobrazeno 1 - 10
of 15
pro vyhledávání: '"R. N. Kini"'
Publikováno v:
Journal of Materials Science: Materials in Electronics. 34
Publikováno v:
Nanotechnology. 33(49)
The incidence of intra-flake heterogeneity of spectroscopic and electrical properties in chemical vapour deposited (CVD) WS
The incidence of intra-flake heterogeneity of spectroscopic and electrical properties in chemical vapour deposited (CVD) WS2 flakes is explored in a multi-physics investigation via spatially resolved spectroscopic maps correlated with electrical, ele
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d87861552969193e438cc66dd443d1a6
http://arxiv.org/abs/2112.13543
http://arxiv.org/abs/2112.13543
Publikováno v:
Scientific Reports
We present helicity resolved photoluminescence (PL) measurements of WS2 spiral (SPI) nanostructures. We show that very high degree of circular polarization (DCP) (~94 ± 4%) is obtained from multilayer SPI samples at room temperature upon excitation
Publikováno v:
Physical Review B. 90
It has been theoretically predicted that isolated Bi forms a resonant state in the valence band of the dilute bismide alloy, ${\mathrm{GaAs}}_{1\ensuremath{-}x}{\mathrm{Bi}}_{x}$. We present ultrafast pump-probe reflectivity measurements of this inte
Publikováno v:
Physical Review B. 83
We studied the effect of Bi incorporation on the hole mobility in the dilute bismide alloy GaAs${}_{1\ensuremath{-}x}$Bi${}_{x}$ using electrical transport (Hall) and photoluminescence (PL) techniques. Our measurements show that the hole mobility dec
Publikováno v:
Applied Physics Letters. 104:091903
We have used femtosecond laser pulses to generate coherent acoustic phonons in the dilute Bismide alloy, GaAs1−xBix. The observed oscillation periods match well with the oscillation periods calculated using the propagating strain pulse model. We at
Publikováno v:
Journal of Applied Physics. 106:043705
We present measurements of the electron Hall mobility in n-type GaAs1−xBix epilayers. We observed no significant degradation in the electron mobility with Bi incorporation in GaAs, up to a concentration of 1.2%. At higher Bi concentration (≥1.6%)
Publikováno v:
Journal of Applied Physics. 104:113534
We report on photoluminescence measurements of GaAs(1−x)Bix thin films containing dilute concentration (x≤0.045%) of isoelectronic impurity Bi. At a temperature of 4 K, we observed a sharp emission line at ∼1.510 eV and a series of undulations
Publikováno v:
Semiconductor Science & Technology; Jul2019, Vol. 34 Issue 7, p1-1, 1p