ppe51 variants promote non-replicating Mycobacterium tuberculosis to grow at acidic pH by selectively promoting glycerol uptake

Autor: Shelby J. Dechow, Jacob J. Baker, Megan R. Murto, Robert B. Abramovitch

In defined media supplemented with single carbon sources, Mycobacterium tuberculosis (Mtb) exhibits carbon source specific growth restriction. When supplied glycerol as the sole carbon source at pH 5.7, Mtb establishes a metabolically active state of

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e53e664edec949bd9e406b5e8ae6750c
https://doi.org/10.1101/2021.05.19.444820

Junction profiles of sub keV ion implantation for deep sub-quarter micron devices

Autor: D. Wagner, Babak Adibi, Adrian Murrell, R. Mickevicius, R. Doherty, Majeed A. Foad, S. Simeonov, D. Sing, R. Murto, C. Ferguson, Amir Al-Bayati, V. Menisilenko, S. Tandon, A. Jian, L. Larson

Publikováno v: Al-Bayati, A, Tandon, S, Doherty, R, Murrell, A, Wagner, D, Foad, M, Adibi, B, Mickevicius, R, Meniailenko, V, Simeonov, S, Jain, A, Sing, D, Ferguson, C, Murto, R, Larson, L, Ryssel, H (ed.), Frey, L (ed.), Gyulai, J (ed.) & Glawischnig, H (ed.) 2000, Junction profiles of sub keV ion implantation for deep sub-quarter micron devices . in Conference on Ion Implantation Technology, 2000 . pp. 87-90 . https://doi.org/10.1109/.2000.924097

Ultra shallow junctions

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::668da5db75b375d7cfe4053b882a5392
https://doi.org/10.1109/iit.2000.924097

Boxer cross measurements of laser annealed shallow junctions

Autor: S. Talwar, L. Bechtler, P. Borden, R. Murto, D. Sing

Publikováno v: 2000 International Conference on Ion Implantation Technology Proceedings. Ion Implantation Technology - 2000 (Cat. No.00EX432).

This paper discusses the characterization of the physical processes associated with the formation of ultra-shallow junctions using laser thermal annealing (LTA). Wafers were implanted with a Ge preamorphization implant (PAI) followed by a dopant impl

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::974339ccd7bda5e5016ea5d6dc1a5d8e
https://doi.org/10.1109/iit.2000.924236

Implementation of a universal exhaust solution for implanter fire prevention

Autor: R. Murto

Publikováno v: Proceedings of 11th International Conference on Ion Implantation Technology.

In ion implanters, toxic and pyrophoric vapors pumped from the source region can leave deposits along the inner walls of the non-conductive pipe across the high voltage gap. The subsequent distortion in the electrical field across this gap can result

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::330d2462c09da5353f0da37f35424b8a
https://doi.org/10.1109/iit.1996.586406

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