Zobrazeno 1 - 10
of 37
pro vyhledávání: '"R. Motto"'
Autor:
Shinji Hatae, Toshiya Nakano, Eric R. Motto, Yuki Hata, Seiichiro Inokuchi, Shoji Saito, Arata Izuka
Publikováno v:
2016 IEEE Applied Power Electronics Conference and Exposition (APEC).
This paper presents a new power semiconductor IGBT module family dedicated for Electric Vehicle (EV) and Hybrid Electric Vehicle (HEV) power-train inverter applications, especially for higher power requirements. The new IGBT module family adopts a 6-
Publikováno v:
2015 IEEE Energy Conversion Congress and Exposition (ECCE).
This paper presents a new slim package and new RC-IGBT for Dual In-line Package Intelligent Power Modules developed by Mitsubishi Electric for motor control in consumer goods. The RC-IGBT (Reverse Conducting IGBT) integrates the IGBT and FWD into a s
Publikováno v:
2015 17th European Conference on Power Electronics and Applications (EPE'15 ECCE-Europe).
Energy efficiency requirements of PV-inverter and UPS can be reached through multi-level IGBT topologies. A 3-level T-type topology utilizing dedicated 650V and 1200V IGBT and free-wheeling Diode chips (FwDi) and low inductance module construction ar
Publikováno v:
2015 IEEE Applied Power Electronics Conference and Exposition (APEC).
Annual Performance Factor (APF) requirements which calculate the annual electricity consumption have been applied to applications such as air conditioners necessitating reduction in the power consumption of the semiconductor switches in the inverter.
Autor:
John F. Donlon, Khalid Hassan Hussein, Nakata Yosuke, Noboru Miyamoto, Eric R. Motto, Mikio Ishihara, Toshiyo Nakano
Publikováno v:
2015 IEEE Applied Power Electronics Conference and Exposition (APEC).
This paper presents a new compact, direct liquid-cooled IGBT power module series (J1-Series) addressing major requirements for Electric and Hybrid Electric (EV/HEV) power-train inverter applications in terms of high power-density, light-weight, and h
Autor:
Eugen Wiesner, John F. Donlon, Kenji Hatori, Shuichi Kitamura, Tetsuo Motomiya, Yasuhiro Sakai, Eckhard Thal, Kazuhiro Kurachi, Shinichi Iura, Hiroshi Yamaguchi, Kenji Ota, Yumie Kitajima, Eric R. Motto
Publikováno v:
2014 IEEE Energy Conversion Congress and Exposition (ECCE).
Publikováno v:
2013 Twenty-Eighth Annual IEEE Applied Power Electronics Conference and Exposition (APEC).
This paper describes the characteristics of a new IGBT based intelligent power module (IPM) designed for 15KW to 60KW industrial motor drive applications. For the first time HVIC (High Voltage Integrated Circuit) technology has been adopted in this p
Autor:
Eugen Stumpf, Minho Kim, Katsumi Nakamura, John F. Donlon, Hitoshi Uemura, Eric R. Motto, Shinichi Iura
Publikováno v:
2012 Twenty-Seventh Annual IEEE Applied Power Electronics Conference and Exposition (APEC).
Catastrophic failure of high voltage power semiconductors due to cosmic rays was identified in the 1990s. [1–3] As the phenomenon was characterized, device data sheets were modified to include a Long-Term DC Voltage Stability value (LTDS) to provid
Autor:
Eric R. Motto, John F. Donlon
Publikováno v:
2012 Twenty-Seventh Annual IEEE Applied Power Electronics Conference and Exposition (APEC).
This paper describes the characteristics of a new power module having user accessible on-chip temperature and current sensing features. Temperature sensing is accomplished by measuring the forward voltage drop of a string of diodes fabricated on the
Publikováno v:
2011 IEEE Energy Conversion Congress and Exposition.
The latest 6th generation Carrier Stored Trench Gate Bipolar Transistor (CSTBT™) provides state of the art optimization of conduction and switching losses in IGBT modules. Use of low values of resistance in series with the IGBT gate produces low tu