Zobrazeno 1 - 10
of 185
pro vyhledávání: '"R. Mohan Sankaran"'
Publikováno v:
Nature Communications, Vol 14, Iss 1, Pp 1-10 (2023)
Abstract The spatial afterglow is a region at the boundary of a non-equilibrium plasma where charged species relax into ambient equilibrium. In many applications, the spatial afterglow is the part of the plasma that interacts with surfaces, such as s
Externí odkaz:
https://doaj.org/article/a7e5f92c8b084a8dadbacd26512fa18c
Publikováno v:
Nature Communications, Vol 7, Iss 1, Pp 1-1 (2016)
Nature Communications 6 Article number:7248 (2015); Published: 19 June 2015; Updated 6 June 2016. We have discovered an error in the original data analysis of our publication, which significantly impacts the model parameters derived from experiment.
Externí odkaz:
https://doaj.org/article/1364b2d1b706486ea10df1cd4d1b6c66
Autor:
Jian Wang, Necip B. Üner, Scott Edwin Dubowsky, Matthew P. Confer, Rohit Bhargava, Yunyan Sun, Yuting Zhou, R. Mohan Sankaran, Jeffrey S. Moore
Publikováno v:
Journal of the American Chemical Society. 145:10470-10474
Publikováno v:
Langmuir. 38:8975-8986
The removal of per- or polyfluorinated alkyl substances (PFAS) has received increasing attention because of their extreme stability, our increasing awareness of their toxicity at even low levels, and scientific challenges for traditional treatment me
Publikováno v:
Journal of Materials Chemistry C. 10:5257-5265
Surface morphology of silver (Ag) structures prepared by plasma conversion of particle-free inks can be controlled by using solvents of different evapration rates.
Publikováno v:
Langmuir. 37:8007-8013
Studies have shown that when insulator surfaces become electrostatically charged, complex spatial distributions of charge are produced, which are made up of micrometer-scale regions of both charge polarities. The origin of these charge patterns, ofte
Publikováno v:
ACS macro letters. 6(3)
We report a microplasma-based process to fabricate stretchable, electrically conductive metal patterns from metal-cation containing polymers. The technique is compatible with prestraining strategies, allowing films to remain conductive with almost no
High Ion/Ioff ratio 4H-SiC MISFETs with stable operation at 500 °C using SiO2/SiNx/Al2O3 gate stacks
Autor:
Junzhe Kang, Kai Xu, Hanwool Lee, Souvik Bhattacharya, Zijing Zhao, Zhiyu Wang, R. Mohan Sankaran, Wenjuan Zhu
Publikováno v:
Applied Physics Letters. 122:082906
In this work, 4H-SiC lateral metal-insulator-semiconductor field-effect transistors (MISFETs) were demonstrated to operate up to 500 °C with a high on/off current ratio (over 109). A low off-state current of 3.6 × 10−9 mA/mm at 500 °C was obtain
Publikováno v:
Journal of Microelectromechanical Systems. 29:1026-1031
Printed sensors that rely on low-cost substrate materials and additive fabrication processes are needed for wearable and disposable device applications. A critical challenge associated with currently available printed sensors is their inferior perfor