Zobrazeno 1 - 10
of 93
pro vyhledávání: '"R. Mellet"'
Autor:
O. Le Minor, S. Boucher, L. Joudou, R. Mellet, M. Sourice, T. Le Moullec, A. Nicolier, F. Beilvert, A. Sigognault-Flochlay
Publikováno v:
World Rabbit Science, Vol 27, Iss 3, Pp 143-156 (2019)
In 2010, a variant of the rabbit haemorrhagic disease virus (RHDV) belonging to a new GI.2 genotype was identified in France and rapidly spread worldwide. Due to antigenic difference, new vaccines including G1.2 strains have been developed to confer
Externí odkaz:
https://doaj.org/article/5de6d23e674a442ba468525829290e6d
Autor:
A. Nicolier, M. Sourice, L. Joudou, T. Le Moullec, S. Boucher, A. Sigognault-Flochlay, O. Le Minor, R. Mellet, F. Beilvert
Publikováno v:
RiuNet. Repositorio Institucional de la Universitat Politécnica de Valéncia
instname
World Rabbit Science, Vol 27, Iss 3, Pp 143-156 (2019)
instname
World Rabbit Science, Vol 27, Iss 3, Pp 143-156 (2019)
In 2010, a variant of the rabbit haemorrhagic disease virus (RHDV) belonging to a new GI.2 genotype was identified in France and rapidly spread worldwide. Due to antigenic difference, new vaccines including G1.2 strains have been developed to confer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7da43941ab2f68675aa0efccd182b3d2
Publikováno v:
Journal de Physique III. 4:2249-2257
Publikováno v:
Journal of Crystal Growth. 134:353-368
A relatively large number of physical parameters are involved in the formation of lamellar eutectic patterns in thin-film directional solidification: parameters pertaining to the phase diagram of the alloy, diffusion coefficient in the liquid, solid-
Publikováno v:
Materials Science and Engineering: B. 21:165-168
This paper compares tertiarybutylphosphine (TBP), and 1,2 bis-phosphinoethane (BPE) as phosphorus precursors for the growth of InP in chemical beam epitaxy. The thermal decomposition of both sources in a low pressure cracking cell produces dimer P2 a
Publikováno v:
Applied Superconductivity. 1:627-634
We show that lead-substitution in single crystals of Bi2Sr2CaCu2O8+y induces a decrease of both the structural and resistivity anisotropies. In the first place we have found that lead substitution can reduce the resistivity anisotropy ρcρab by two
Autor:
M.P. Berthet, A.M. Pougnet, P. Abraham, Veronique Soulière, A. Ougazzaden, J. Bouix, A. Mircea, Yves Monteil, R. Mellet, M. Sacilotti
Publikováno v:
Materials Science and Engineering: B. 17:34-40
Among all the possible alternative precursors for growth of indium-containing material, the trimethylindium-trimethylamine adduct appears to be the most suitable. It is a simple addition compound between trimethylindium and trimethylamine, non-pyroph
Autor:
N. Jourdan, Bernard Sermage, R. Mellet, A.M. Pougnet, C. Dubon-Chevallier, J.L. Benchimol, F. Alexandre, F. Héliot
Publikováno v:
Journal of Crystal Growth. 127:690-694
This paper presents a comparative study of GaAs carbon doping by molecular beam epitaxy (MBE) and chemical beam epitaxy (CBE), using a heated graphite filament and trimethylgallium (TMG), respectively, as sources of carbon. With a growth rate twice h
Autor:
R. Mellet, A.M. Pougnet, A. Ougazzaden, M.P. Berthet, J. Bouix, P. Abraham, Yves Monteil, A. Mircea, Veronique Soulière
Publikováno v:
Journal of Crystal Growth. 124:93-98
The trimethylindium-trimethylamine adduct was synthesized from indium and methyliodide as starting materials. After purification by zone refining, vapor pressure studies were performed to show its suitability in MOVPE growth of III–V semiconductors
Publikováno v:
Journal of Crystal Growth. 120:119-123
InP layers were grown by chemical beam epitaxy (CBE) using high purity thermally precracked tertiarybutylphosphine (TBP) and trimethylindium (TMI) as the source of the group III element. For optimized substrate temperature and V/III ratio, InP films