Zobrazeno 1 - 10
of 27
pro vyhledávání: '"R. Marcks von Würtemberg"'
Autor:
R. Marcks von Würtemberg, A. Rouvié, Carl Asplund, Eric Costard, J. Brocal, Shagufta Naureen, Jean-Baptiste Rodriguez, Philippe Christol, O. Saint-Pé, Ruslan Ivanov, Linda Höglund, Rodolphe Alchaar
Publikováno v:
QSIP2018
QSIP2018, Jun 2018, Stockholm, Sweden. pp.158-163, ⟨10.1016/j.infrared.2018.10.036⟩
QSIP2018, Jun 2018, Stockholm, Sweden. pp.158-163, ⟨10.1016/j.infrared.2018.10.036⟩
In this paper, a comparison of quantum efficiency and dark current densities of shallow etched and deep etched InAs/GaSb type-II superlattice photodiodes is presented. The detectors were tailored for space applications with measured cut-off wavelengt
Autor:
Linda Höglund, Sergiy Smuk, Carl Asplund, Himanshu Kataria, R. Marcks von Würtemberg, Henk Martijn, Eric Costard, Anders Gamfeldt
Publikováno v:
Infrared Physics & Technology. 84:28-32
Type-II InAs/GaSb superlattice detectors and focal plane arrays (FPAs) with cut-off wavelength at 5.1 μm have been studied. For single pixel devices, dark current densities of 1 × 10 −6 A/cm 2 and quantum efficiencies of 53% were measured at 120
Autor:
Carl Asplund, A. Rouvié, Shagufta Naureen, R. Marcks von Würtemberg, Rodolphe Alchaar, J. Brocal, Linda Höglund, Philippe Christol, Eric Costard, O. Saint-Pé, Jean-Baptiste Rodriguez
Publikováno v:
International Conference on Space Optics — ICSO 2018.
In this communication, we report on electrical and electro-optical characterizations of InAs/GaSb Type-II superlattice (T2SL) LWIR photodetector, showing cut-off wavelengths at 11μm at 77K. The devices, made of barrier structures in XBp configuratio
Autor:
Linda Höglund, Jean-Baptiste Rodriguez, Ruslan Ivanov, O. Saint-Pé, A. Rouvié, Shagufta Naureen, J. Brocal, R. Marcks von Würtemberg, Rémi Rossignol, Eric Costard, Philippe Christol, Carl Asplund
Publikováno v:
Infrared Technology and Applications XLIV
Infrared Technology and Applications XLIV, Apr 2018, Orlando, United States. ⟨10.1117/12.2292977⟩
Infrared Technology and Applications XLIV, Apr 2018, Orlando, United States. ⟨10.1117/12.2292977⟩
In this paper, results from the development of LWIR and VLWIR InAs/GaSb type-II infrared photodetector arrays are presented. Dark currents comparable to the HgCdTe benchmark (Rule07) have been observed and the quantum efficiencies of the detectors ex
Autor:
Linda Höglund, Carl Asplund, Anders Gamfeldt, Eric Costard, Himanshu Kataria, R. Marcks von Würtemberg
Publikováno v:
Infrared Technology and Applications XLIII.
Development towards higher operating temperature, smaller pitch and larger format arrays is ongoing for midwave (MW) InAs/GaSb superlattice detectors at IRnova. One part of this effort entails improvement in the MW detector design, which has resulted
Autor:
Linda Höglund, Sergiy Smuk, Eric Costard, Anders Gamfeldt, Henk Martijn, Himanshu Kataria, Carl Asplund, R. Marcks von Würtemberg, Dan Lantz
Publikováno v:
Infrared Technology and Applications XLII.
IRnova has been manufacturing mid wave infrared (MWIR) detectors based on InAs/GaSb type-II superlattices (T2SL) since 2014. Results from the first years of production of MWIR focal plane arrays (FPAs) with 320 x 256 pixels on 30 μm pitch using the
Autor:
Carl Asplund, Oscar Gustafsson, R. Marcks von Würtemberg, Ulf Ekenberg, Stéphane Junique, Amir Karim, Susanne Almqvist, Henk Martijn, Jesper Berggren, Anders Hallén, Mattias Hammar, Hedda Malm, Qin Wang, Linda Höglund, Jan Y. Andersson, Bertrand Noharet, Andrey Gromov, Andy Zhang
Publikováno v:
Infrared Physics & Technology. 54:287-291
We report on the design and fabrication of (Al)GaAs(Sb)/InAs tensile strained quantum-dot (QD) based detector material for thermal infrared imaging applications in the long-wavelength infrared (LWI ...
Publikováno v:
IET Optoelectronics. 3:112-121
A number of GaAs-based long-wavelength, vertical-cavity, surface-emitting laser structures with optical and electrical confinement based on selective area epitaxy have been fabricated and evaluated ...
Autor:
Petrus Sundgren, E. Odling, R. Marcks von Würtemberg, Mattias Hammar, V. Oscarsson, Jesper Berggren, M. Ghisoni, J. Malmquist
Publikováno v:
Applied Physics Letters. 85:4851-4853
We report on the performance and analysis of 1.3μm range InGaAs∕GaAs vertical-cavity surface-emitting lasers (VCSELs) with an integrated mode filter consisting of a patterned silicon layer on the top distributer Bragg reflector. In this way, 1mW o
Publikováno v:
SPIE Proceedings.
A novel electrical and optical confinement scheme for surface emitting optoelectronic devices is presented. The scheme is based on epitaxial regrowth of a pnp current blocking layer structure around a mesa etched in the vertical cavity region of the