Zobrazeno 1 - 10 of 35 pro vyhledávání: '"R. Mahamdi"'
2
An algorithm for boron diffusion in MOS transistors using Silvaco Athena and MATLAB
Autor: I. Rahmani, R. Mahamdi, N. Guenifi
Publikováno v: Phosphorus, Sulfur, and Silicon and the Related Elements. 193:98-103
In this paper we have developed an algorithm of boron diffusion after thermal annealing in a highly doped polysilicon film. This algorithm takes into account electrically active point defects by as...
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6a494e1567f26f584e68855c5ca95980
https://doi.org/10.1080/10426507.2017.1417305
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3
Boron phosphorus and arsenic diffusion in MOS transistors: Simulation and analysis in 2D and 3D
Autor: R. Mahamdi, I. Rahmani, N. Guenifi
Publikováno v: Phosphorus, Sulfur, and Silicon and the Related Elements. 193:92-97
The article introduces the benefits and application features of Silvaco Technology Computer Aided Design ‘TCAD’ tool to predict the performance of electrical components and their reliability. In th...
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::dabb9b4274960d08e80e34c6c3394e55
https://doi.org/10.1080/10426507.2017.1417304
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4
Characterizing slow state near Si-SiO 2 in MOS structure
Autor: N. Guenifi, D. Bauza, R. Mahamdi
Publikováno v: Phosphorus, Sulfur, and Silicon and the Related Elements
Phosphorus, Sulfur, and Silicon and the Related Elements, Taylor & Francis, 2018, 193 (2), pp.88-91. ⟨10.1080/10426507.2017.1417303⟩
International audience; The Equilibrium Voltage Step (EVS) technique has been used for extraction of depth and energy concentration profile of traps situated in the oxide of a lightly stressed metal-oxide-semiconductor (MOS) structure. This has been
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0ad538f54ba0d310542270c4692f1bd4
https://hal.archives-ouvertes.fr/hal-02015369
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5
FTIR and AFM Studies of the Ge on Porous Silicon/Si Substrate Hetero-Structure Obtained by Molecular Beam Epitaxy
Autor: S. Gouder, Antoine Ronda, Luc Favre, S. Escoubas, Mansour Aouassa, Isabelle Berbezier, R. Mahamdi
Publikováno v: Journal of New Technology and Materials
Journal of New Technology and Materials, 2014, 4 (1), pp.112--115
Journal of New Technology and Materials, Université Larbi Ben Mhidi de Oum El Bouaghi, 2014, 4 (1), pp.112--115
International audience
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5dc5faf901d21c6deb493c608ef74f02
https://doi.org/10.12816/0010313
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7
Enhancement of the optical performance of ZnO thin-film using metallic nano-particles for optoelectronic applications
Autor: Hichem Ferhati, R. Mahamdi, Fayçal Djeffal, N. Boukhenoufa
Publikováno v: 2016 17th International Conference on Sciences and Techniques of Automatic Control and Computer Engineering (STA).
In this paper, versatile structures based on dissimilar metallic nano-particles (Ag, Au, Ti, Al) are proposed to enhance the ZnO thin film optical performance for both optoelectronic and environment monitoring applications. An Exhaustive study of the
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ea5ed9de4132088dba89d3673e02ca4a
https://doi.org/10.1109/sta.2016.7952007
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8
Ellipsometric and Rutherford Back Scattering Spectrometry Studies of SiOXNY Films Elaborated by Plasma-Enhanced Chemical Vapour Deposition Technique
Autor: P Temple-Boyer, L Saci, R. Mahamdi, F. Mansour, M Boulesbaa, M Collet, C. Molliet
Publikováno v: Journal of Nanoscience and Nanotechnology. 11:9118-9122
Silicon oxynitride (SiO(X)N(Y)) thin films were deposited by plasma-enhanced chemical vapour deposition technique (PECVD) from silane (SiH4), nitrous oxide (N2O), ammonia (NH3) and nitrogen (N2) mixture. Spectroscopic ellipsometry (SE), in the range
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::74292f683deb95978ff9c448d5a3ed20
https://doi.org/10.1166/jnn.2011.4303
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9
Study of grains size distribution and electrical activity of heavily boron doped polysilicon thin films
Autor: R. Mahamdi, Pierre Temple-Boyer, Fatiha Bouaziz, Hachemi Bouridah, F. Mansour
Publikováno v: Materials Science in Semiconductor Processing. 14:261-265
The grain size distribution (GSD) and related electrical activity of boron heavily doped amorphous LPCVD thin films were studied according to the heat treatment durations. Results show that GSD approaches a logarithmic-normal form at a short annealin
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::79bf77e205f2880167a44356154645c9
https://doi.org/10.1016/j.mssp.2011.04.006
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10
Nitrogen doped silicon films heavily boron implanted for MOS structures: Simulation and characterization
Autor: Emmanuel Scheid, Pierre Temple-Boyer, Laurent Jalabert, F. Mansour, Hachemi Bouridah, R. Mahamdi
Publikováno v: Materials Science in Semiconductor Processing. 13:383-388
In this work we study the boron diffusion and its activation into recrystallized nitrogen doped silicon thin films (NIDOS) and we also discuss the influence of the chemical interaction between boron and nitrogen in NIDOS films. These films are deposi
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0d62e0aa2fad4e983d4056716f83e2cd
https://doi.org/10.1016/j.mssp.2011.05.003
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