Zobrazeno 1 - 10
of 33
pro vyhledávání: '"R. M. Sieg"'
Publikováno v:
Journal of Materials Science: Materials in Electronics. 13:649-657
We describe the metal-organic chemical vapor deposition (MOCVD) growth of InAsSb/InAs and GaAsSb/GaAs(P) multiple quantum well (MQW) and InAsSb/InAsP and InAsSb/InPSb strained-layer superlattice (SLS) active regions for use in mid-infrared emitters.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e35fbbf53997b218fe701c3a0da7a0d
https://doi.org/10.1023/a:1020662226771
https://doi.org/10.1023/a:1020662226771
Autor:
Steven R. Kurtz, R. M. Sieg, Steven A. Ringel, A. A. Allerman, Aaron R. Arehart, Robert Kaplar
Publikováno v:
Journal of Applied Physics. 90:3405-3408
We have investigated deep levels in 1.05 eV, Sn-doped, n-type In0.075Ga0.925As0.975N0.025 lattice-matched to GaAs. The samples were grown by metal–organic chemical vapor deposition. Capacitance–voltage measurements were used to determine the elec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fdd96dea3c6d630ee093df013b902c68
https://doi.org/10.1063/1.1396832
https://doi.org/10.1063/1.1396832
Publikováno v:
Journal of Electronic Materials. 27:1010-1016
The surface morphology of GaAs films grown on offcut Ge substrates is studied using a scanning force microscope (SFM). We investigated the effects of the Ge buffer layer, growth temperature, film thickness, and prelayer on the GaAs surface morphology
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::703a777413b587aa9623aad511308b66
https://doi.org/10.1007/s11664-998-0154-8
https://doi.org/10.1007/s11664-998-0154-8
Publikováno v:
Journal of Electronic Materials. 27:900-907
The nucleation and growth of GaAs films on offcut (001) Ge wafers by solid source molecular beam epitaxy (MBE) is investigated, with the objective of establishing nucleation conditions which reproducibly yield GaAs films which are free of antiphase d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::962123229c03df6feb56c15bcdd7c62f
https://doi.org/10.1007/s11664-998-0116-1
https://doi.org/10.1007/s11664-998-0116-1
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 14:3283-3287
Large substrate surface temperature decreases are observed during molecular beam epitaxy growth onto small indium bonded substrates, due to coating of the molybdenum block. These large temperature transients, along with other difficulties associated
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::03462f4b43fab6cda2b606317ff792ff
https://doi.org/10.1116/1.580227
https://doi.org/10.1116/1.580227
Autor:
R. M. Sieg, Steven A. Ringel
Publikováno v:
Journal of Applied Physics. 80:448-458
The effects of reabsorption and band‐gap narrowing (BGN) on experimental photoluminescence (PL) spectra of n‐InP grown by metalorganic chemical vapor deposition are analyzed. PL spectra show a pronounced widening of the main PL peak and a shift o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::98a9df332480cdb2ff390995c30f3358
https://doi.org/10.1063/1.362746
https://doi.org/10.1063/1.362746
Autor:
R. M. Sieg, Eric Daniel Jones, Steven R. Kurtz, John F. Klem, C. H. Seager, Andrew A. Allerman
Publikováno v:
Applied Physics Letters. 80:1379-1381
To gain insight into the nitrogen-related defects of InGaAsN, nitrogen vibrational mode spectra, Hall mobilities, and minority carrier diffusion lengths are examined for InGaAsN (1.1 eV band gap) grown by molecular beam epitaxy (MBE). Annealing promo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1e4ff69ba3811bed224daa816bb2a090
https://doi.org/10.1063/1.1453480
https://doi.org/10.1063/1.1453480
Autor:
Edward T. Croke, R. M. Sieg, Samuel A. Alterovitz, Paul G. Young, R. A. Mena, Kang L. Wang, M. O. Tanner, M. J. Harrell
Publikováno v:
Journal of Applied Physics. 74:586-595
Spectroscopic ellipsometry (SE) characterization of several complex Si (sub X)Ge (sub 1-x)/Si heterostructures prepared for device fabrication, including structures for heterojunction bipolar transistors (HBT), p-type and n-type heterostructure modul
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::46b07eaa0931d7205332976c50592a48
https://doi.org/10.1063/1.355271
https://doi.org/10.1063/1.355271
Publikováno v:
Journal of Applied Physics. 73:4357-4361
An ellipsometric study of ambient‐reaction‐produced BaCO3 overlayer growth on laser‐ablated YBa2Cu3O7−x is presented as a function of time. The effects of the anisotropy of YBa2Cu3O7−x on the ellipsometric data inversion process are discuss
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8dd01af0ddc570cfc6280ab9a15f28a2
https://doi.org/10.1063/1.352820
https://doi.org/10.1063/1.352820
Publikováno v:
Thin Solid Films. 220:241-246
An ellipsometric study of MOCVD-grown layers of AlGaAs and InGaAs in thick films and strained layer complex structures is presented. It is concluded that the ternary composition of thick nonstrained layers can be accurately determined to within exper
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5d59de4295063b586650b1d7a0e0b676
https://doi.org/10.1016/0040-6090(92)90579-z
https://doi.org/10.1016/0040-6090(92)90579-z