Zobrazeno 1 - 7
of 7
pro vyhledávání: '"R. M. Sardarli"'
Autor:
N. A. Aliyeva, R. M. Sardarli, F. T. Salmanov, M. Y. Yusifov, A. P. Abdullayev, A. A. Orudjeva
Publikováno v:
Semiconductors. 52:1229-1232
Samples of (TlGaSe2)1 – x(TlInS2)x solid solutions are synthesized. The frequency dependences (2 × 101–106 Hz) of components of the total complex impedance are studied by the impedance spectroscopy technique and relaxation processes are investig
Publikováno v:
Modern Physics Letters B. 34:2050113
The processes of charge transport on alternating current in [Formula: see text] solid solutions have been studied. It has been established that in weak alternating electric fields, there is a hopping mechanism of charge transfer over localized states
Autor:
R. Sh. Agaeva, R. M. Sardarli, E. K. Huseynov, F. T. Salmanov, A. P. Abdullayev, O. A. Samedov, N. A. Alieva
Publikováno v:
Semiconductors. 47:707-712
The switching effect, field and temperature dependences of the permittivity and conductivity of TlGaTe2 crystals subjected to various γ-irradiation doses are studied. Under rather low electric fields, the phenomenon of threshold switching with an S-
Autor:
O. A. Samedov, E. K. Huseynov, R. M. Sardarli, E. M. Qocayev, A. P. Abdullayev, F. T. Salmanov
Publikováno v:
Semiconductors. 45:975-979
Temperature dependences of electrical conductivity σ(T) and permittivity ɛ(T) of one-dimensional (1D) TlGaTe2 single crystals are investigated. At temperatures higher than 305 K, superionic conductivity of the TlGaTe2 is observed and is related to
Autor:
O. A. Samedov, E. K. Huseynov, A. P. Abdullayev, R. M. Sardarli, F. T. Salmanov, G. R. Safarova
Publikováno v:
Semiconductors. 44:585-589
Temperature dependences of electrical conductivity σ(T) and current-voltage characteristics of one-dimensional TlGaTe2 single crystals subjected to various doses of γ-ray radiation in both geometries of the experiment-along nanochains parallel to t
Publikováno v:
Ferroelectrics. 298:275-281
Recent theoretical investigations predict that the thermal filling of trap centers could lead to an intricate sequence of phase transitions with unstable boundary state between the phases. This fact has motivated the experimental study of ferroelectr
Publikováno v:
ICMENS
In semiconductors TlInS/sub 2/ the ferroelectric phase transition involves participation of an intermediate incommensurate phase. At the present, this incommensurate phase is an object of intensive investigation, since the relaxor peculiarity of mate