Zobrazeno 1 - 6
of 6
pro vyhledávání: '"R. M. Sadigov"'
Publikováno v:
Semiconductors. 51:34-37
The structure and surface morphology of epitaxial CdTe films grown on glassy substrates with and without compensation with an additional Te vapor source during growth are studied. The optimal conditions of the production of structurally perfect epita
Publikováno v:
Inorganic Materials. 52:886-889
We have studied the growth and structure of epitaxial films of Cd1–xMnx (x = 0.03) diluted magnetic solid solutions grown on mica substrates by molecular beam epitaxy and identified conditions for producing n- and p-type epitaxial films. Using an a
Publikováno v:
Photonics, Devices, and Systems VI.
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Publikováno v:
Crystallography Reports. 54:331-333
The growth and structure of Pb1 − x Mn x Se (Ga) (NGa = 0.8 at %) films with thicknesses of 0.3–0.5 μm, grown on single-crystal PbSe1 − x S x (100) substrates by molecular-beam epitaxy, have been studied. It is established that films grow in a
Publikováno v:
SPIE Proceedings.
The experimental results of photoelectric and optic properties on the gallium contained (NGa=O,5÷1 at%), Pb1-xMnxTe epitaxial films with thickness d=1÷5 μm, obtained by a molecular beam condensation method on BaF2 (111) substrate have been present
Publikováno v:
SPIE Proceedings.
In the present work the features of growth and photoconductivity of epitaxial films of (formula available in paper) grown on substrates BaF 2 (111, 100) by method of molecular beam condensation are investigated. Is established, that of film with perf