Zobrazeno 1 - 10 of 25 pro vyhledávání: '"R. M. S. Kawabata"'
1
Surface Passivation of InGaAs/InP p-i-n Photodiodes Using Epitaxial Regrowth of InP
Autor: Osvaldo M. Braga, Mauricio P. Pires, Cristian A. Delfino, R. M. S. Kawabata, Sanjay Krishna, G. S. Vieira, Euclydes Marega, L. D. Pinto, Patricia L. Souza, John A. Carlin
Publikováno v: Repositório Institucional da USP (Biblioteca Digital da Produção Intelectual)
Universidade de São Paulo (USP)
instacron:USP
The use of epitaxial regrowth of InP on lattice-matched In0.53Ga0.47 As for passivation of photodiodes lateral mesa surfaces is investigated. The effect of the regrown layer was examined by photoluminescence and dark current measurements and compared
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9a6f421a30dfefc62bef9ec20a2cd167
https://doi.org/10.1109/jsen.2020.2987006
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2
Optical Characterization of InAs/InGaP Intermediate Band Solar Cells
Autor: Mauricio P. Pires, Clarissa de Paula Dias, R. Jakomin, Eleonora Cominato Weiner, R. M. S. Kawabata, Patricia L. Souza
Publikováno v: 2021 35th Symposium on Microelectronics Technology and Devices (SBMicro).
Intermediate Band Solar Cells (IBSCs), are among the candidates for next-generation photovoltaic devices with improved efficiency, replacing the existing single junction solar cells. In this work, intermediate bands have been formed growing InAs quan
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d30b7bf45da23cf21d0abe93d7cfc3ea
https://doi.org/10.1109/sbmicro50945.2021.9585773
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3
The Role of Defects on the Performance of Quantum Dot Intermediate Band Solar Cells
Autor: Maryam Al Huwayz, R. M. S. Kawabata, Mohamed Henini, Mauricio P. Pires, L. D. Pinto, R. Jakomin, Daniel Neves Micha, Lida Janeth CollazosPaz, Patricia L. Souza
Electrically active defects present in three InAs/GaAs quantum dots (QDs) intermediate band solar cells grown by metalorganic vapor phase epitaxy have been investigated. The devices’ structures are almost identical, differing only in the growth tem
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a8319d59a1ee547885635fbf798996a1
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4
Two-dimensional ordered growth of InAs nanowires assisted by randomly deposited silver nanoparticles on a topographically modified surface by a focused ion beam
Autor: Mauricio P. Pires, R. Ribeiro-Andrade, Thiago L. Vasconcelos, Wagner N. Rodrigues, R. M. S. Kawabata, Patricia L. Souza
Publikováno v: Applied Surface Science. 493:271-278
Self-organized nanowires were formed on topographically and orderly modified surfaces by a focused ion beam. Silver catalyst nanoparticles were deposited on the regular shallow hole arrangements on the InP (001), which were prepared with three differ
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e8ad00cd628f95f850c718a2a93dc194
https://doi.org/10.1016/j.apsusc.2019.06.024
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6
Quantifying milk proteins using infrared photodetection for portable equipment
Autor: Patricia L. Souza, R. M. S. Kawabata, Daniela Szwarcman, Mauricio P. Pires, Germano Maioli Penello
Publikováno v: Journal of Food Engineering. 308:110676
Raw milk quality is a key component in dairy chains and it demands producers to evaluate it routinely to ensure the safety and composition of their products. The amounts of protein and fat in milk are normally used as quality standards. The protein c
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8332b123991aa3185cc677a579878871
https://doi.org/10.1016/j.jfoodeng.2021.110676
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7
Exploring Parity Anomaly for Dual Peak Infrared Photodetection
Autor: Daniel Neves Micha, Marcelo Z. Maialle, R. M. S. Kawabata, Germano Maioli Penello, Patricia L. Souza, Marcos H. Degani, Mauricio P. Pires
Publikováno v: IEEE Journal of Quantum Electronics. 52:1-6
In this paper, we show a superlattice quantum well infrared photodetector (S-QWIP) grown by metal-organic vapor phase epitaxy with two narrow photocurrent peaks in the mid infrared range due to transitions between the ground state from a quantum well
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::49527caa8169d4a064b15f5fb3872aba
https://doi.org/10.1109/jqe.2016.2623271
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8
Transition Energy Calculations of Type II In(As)P/InGaP Quantum Dots for Intermediate Band Solar Cells
Autor: Patricia L. Souza, R. M. S. Kawabata, B. V. Rocha, R. Jakomin, Mauricio P. Pires, L. P. Dornelas
Publikováno v: 2019 34th Symposium on Microelectronics Technology and Devices (SBMicro).
In this work, we perform computational simulations of InAsP type II quantum dots for an intermediate band solar cell. We have varied parameters such as height, width and percentage of P of the quantum dots alloy to determine their influence on the op
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::11e06ce89cea041fc75f1ebd71dbafc3
https://doi.org/10.1109/sbmicro.2019.8919441
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9
Effect of InP epitaxial layer removal from an MOVPE reactor on in-situ Zn diffusion for the development of focal plane arrays
Autor: L. D. Pinto, Patricia L. Souza, Mauricio P. Pires, R. M. S. Kawabata, M. G. Rua, E. P. Herculano, G. S. Vieira
Publikováno v: 2018 33rd Symposium on Microelectronics Technology and Devices (SBMicro).
Diffusion of Zn in InP epitaxial layers, for application in the development of focal plane arrays using planar geometry, has been investigated. The InP layer has to go through a lithographic process between growth and diffusion, meaning it is exposed
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::240199baa9d42b4b2020516864b5e038
https://doi.org/10.1109/sbmicro.2018.8511095
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10
InxGa1-xAs/InyGa1-yP Multiple Quantum Wells for Multijunction Solar Cells
Autor: L. D. Pinto, E. Winter, Mauricio P. Pires, Patricia L. Souza, R. M. S. Kawabata, Daniel Neves Micha
Publikováno v: 2018 33rd Symposium on Microelectronics Technology and Devices (SBMicro).
In this work, we report results on the growth and characterization of In x Ga 1-x As/In y Ga 1-y P multiple quantum wells on GaAs substrates to be used in a triple junction solar cell for spatial applications. The stack of several periods of quantum
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2f6568cac4de4c4f70c2093e493f949c
https://doi.org/10.1109/sbmicro.2018.8511441
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