Zobrazeno 1 - 10
of 18
pro vyhledávání: '"R. M. Potemski"'
Publikováno v:
Journal of Applied Physics. 75:1530-1533
Sensitive curvature measurements were performed on 40 A period W/C multilayer structures on Si substrates using a two beam laser reflection technique. A compressive stress of approximately 1530 MPa was measured in these sputtered multilayer films. Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b1c13b6494e9f906c1cd545ac0057964
https://doi.org/10.1063/1.356390
https://doi.org/10.1063/1.356390
Publikováno v:
ChemInform. 22
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e8240b8ddf007586d22ae43cc9a25e7d
https://doi.org/10.1002/chin.199134273
https://doi.org/10.1002/chin.199134273
Publikováno v:
Journal of Applied Physics. 69:3124-3129
The temperature dependence of the contact resistivity of the Si/Ni(Mg) nonspiking contact scheme on p‐GaAs has been investigated. This contact scheme has been shown to form planar contact interfaces with contact resistivities less than 1 × 10−6
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2c9a5a208120296d7470020a27f15a9b
https://doi.org/10.1063/1.348579
https://doi.org/10.1063/1.348579
Publikováno v:
Journal of Crystal Growth. 107:268-273
Carbon doping of Al x Ga 1− x As with x = 0 to 0.3 has been investigated using trimethylarsine (TMAs) as the carbon precursor. Carbon concentrations from 5×10 17 to ⋍ 10 20 cm -3 have been achieved using AsH 3 /TMAs mixtures or TMAs alone. The c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d4c46426301f4d23dab725874eda4c7a
https://doi.org/10.1016/0022-0248(91)90469-l
https://doi.org/10.1016/0022-0248(91)90469-l
Autor:
Michael A. Tischler, S. S. Lau, X. Z. Wang, R. M. Potemski, J. P. Harbison, C. J. Palmstro, L. T. Florez, L. C. Wang, Thomas F. Kuech, E. D. Marshall, Charles C. Han, S. A. Schwarz
Publikováno v:
Journal of Applied Physics. 68:5714-5718
A low‐resistance and nonspiking contact consisting of a layered structure of Si/Ni(Mg) on p‐GaAs is formed by solid‐phase regrowth. Backside secondary‐ion mass spectrometry and cross‐sectional transmission electron microscopy show an initia
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d3d983442790e46cfc7ffc427cb9e88f
https://doi.org/10.1063/1.346990
https://doi.org/10.1063/1.346990
Publikováno v:
Applied Physics Letters. 59:2269-2271
The correlation between the aluminum composition in epitaxial AlxGa1−xAs and double crystal x‐ray diffraction measurements was quantitatively determined. The angular separation ΔΘ, between the diffraction peaks from the AlxGa1−xAs layer grown
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a4031819e28fab1b54f7c973c3a82b9d
https://doi.org/10.1063/1.106040
https://doi.org/10.1063/1.106040
Autor:
Thomas F. Kuech, Patricia M. Mooney, Mark S. Goorsky, F. Cardone, R. M. Potemski, G.J. Scilla
Publikováno v:
Applied Physics Letters. 58:1979-1981
Intentional oxygen doping (≳1017 cm−3) of GaAs and Al0.30Ga0.70As epitaxial layers was achieved during metalorganic vapor phase epitaxy through use of an oxygen‐bearing metalorganic precursor, dimethylaluminum methoxide (CH3)2AlOCH3. The incorp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b641adcfa3045eccfa05825d93b8979
https://doi.org/10.1063/1.105038
https://doi.org/10.1063/1.105038
Publikováno v:
Applied Physics Letters. 58:1617-1619
A thermally stable, nonspiking ohmic contact to p‐GaAs has been developed based on the solid‐phase regrowth mechanism. The contact metallization consists of a layered structure of Pd(250 A)/Sb(100 A)/Mn(10 A)/Pd(250 A)/p‐GaAs. Thermal annealing
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c6d5052db7976468ee4ca7a08c040779
https://doi.org/10.1063/1.105143
https://doi.org/10.1063/1.105143
Publikováno v:
Journal of Applied Physics. 52:814-817
We have analyzed the heterojunctions formed on different parts of a wafer of GaAs which was exposed to a Ga‐Al‐As solution in the presence of a small temperature gradient. The effect of the temperature gradient was to cause growth over part of th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::78fceb1e5307cf7f14026d0d59c9d2f6
https://doi.org/10.1063/1.328768
https://doi.org/10.1063/1.328768
Publikováno v:
Physical Review Letters. 41:260-264
We have observed a sharp threshold for the process of optically induced glide at which the velocity changes by more than a factor of ${10}^{3}$ when the excitation intensity changes only 20%. This threshold is insensitive to doping and to the presenc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8713a28087f280aeae6d2a37e54a0f98
https://doi.org/10.1103/physrevlett.41.260
https://doi.org/10.1103/physrevlett.41.260