Zobrazeno 1 - 9
of 9
pro vyhledávání: '"R. M. Malbon"'
Autor:
J. M. Whelan, R. M. Malbon
Publikováno v:
Journal of The Electrochemical Society. 123:761-765
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb352afb146c6c7ef1c1f1b448281496
https://doi.org/10.1149/1.2132923
https://doi.org/10.1149/1.2132923
Publikováno v:
Applied Physics Letters. 33:92-94
Thin undoped layers of GaAs grown directly on GaAs semi‐insulating substrates via liquid phase epitaxy (LPE) are shown to exhibit excellent buffering characteristics. Interfacial drift mobilities are shown to be much higher for the multilayer struc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::df0e1efc9626a0cebb968a0ae9c30edb
https://doi.org/10.1063/1.90158
https://doi.org/10.1063/1.90158
Autor:
D. H. Lee, R. M. Malbon
Publikováno v:
Applied Physics Letters. 30:327-329
Depth distribution profiles of silicon impurities implanted at 50 to 500 keV have been measured by secondary‐ion mass spectrometry. The as‐implanted profiles are approximately Gaussian with agreement between experiment and theory better than 10%
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::356a0b7d17fa434ee62021706e13a1fb
https://doi.org/10.1063/1.89386
https://doi.org/10.1063/1.89386
Publikováno v:
Applied Physics Letters. 35:277-279
Mechanical back surface damage gettering has been investigated for improving the quality of GaAs substrates and VPE layers on semi‐insulating GaAs. It has been shown that the pregettering of substrates reduces the interfacial defect density and alt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::78b28e9aad4e7b3f741b6cf381114910
https://doi.org/10.1063/1.91070
https://doi.org/10.1063/1.91070
Publikováno v:
Journal of The Electrochemical Society. 123:1413-1415
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::80e284733f9939a2a8e3f0f95319a3f7
https://doi.org/10.1149/1.2133088
https://doi.org/10.1149/1.2133088
Autor:
R. J. Blattner, R. Ormond, R. Sankaran, Charles A. Evans, T. J. Magee, D. S. Day, R. M. Malbon
Publikováno v:
Applied Physics Letters. 38:559-561
A technique has been investigated for creating sharply defined (near‐surface) ’’square‐well’’ Cr‐depletion channels in GaAs with subsequent stability of Cr to anneal temperatures of 850 °C. Using 100‐keV B+ implants into surface‐io
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1ee376b576cba70a8c5caf141a155b71
https://doi.org/10.1063/1.92412
https://doi.org/10.1063/1.92412
Publikováno v:
Chemischer Informationsdienst. 7
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::00367d371757b6a51e308c2586f2a963
https://doi.org/10.1002/chin.197651010
https://doi.org/10.1002/chin.197651010
Publikováno v:
Journal of Applied Physics. 40:4983-4984
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ee4f39fe49fdbdb58c22ac46faf5cd4c
https://doi.org/10.1063/1.1657330
https://doi.org/10.1063/1.1657330
Publikováno v:
Applied Physics Letters. 10:9-10
Thin‐film zinc‐oxide microwave acoustic transducers have been formed successfully by vacuum deposition techniques upon a cooled substrate (−50°C) by evaporation of zinc with an oxygen beam. The films are hexagonal preferentially oriented with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c1154691968da296d728428ad3dec0c0
https://doi.org/10.1063/1.1754800
https://doi.org/10.1063/1.1754800