Zobrazeno 1 - 8
of 8
pro vyhledávání: '"R. M. Jock"'
Autor:
John M. Anderson, Troy England, Martin Rudolph, Malcolm S. Carroll, S. M. Carr, Matthew Curry, Peter Anand Sharma, Andrew Mounce, Chloe Bureau-Oxton, Patrick Harvey-Collard, DeAnna M. Campbell, Joel R. Wendt, R. M. Jock, Michael Lilly, Daniel R. Ward
Publikováno v:
Scientific Reports
Scientific Reports, Vol 9, Iss 1, Pp 1-8 (2019)
Scientific Reports, Vol 9, Iss 1, Pp 1-8 (2019)
High-fidelity single-shot readout of spin qubits requires distinguishing states much faster than the T1 time of the spin state. One approach to improving readout fidelity and bandwidth (BW) is cryogenic amplification, where the signal from the qubit
Autor:
Malcolm S. Carroll, R. M. Jock, Daniel R. Ward, Martin Rudolph, Michel Pioro-Ladrière, Joel R. Wendt, Andrew Baczewski, Michael Lilly, Tammy Pluym, Ronald P. Manginell, Matthew Curry, Patrick Harvey-Collard, N. Tobias Jacobson, Andrew Mounce, John M. Anderson
Qubits based on transistor-like Si MOS nanodevices are promising for quantum computing. In this work, we demonstrate a double quantum dot spin qubit that is all-electrically controlled without the need for any external components, like micromagnets,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4b7cab2366bca97bdaa0b850ca056bab
http://arxiv.org/abs/1802.02117
http://arxiv.org/abs/1802.02117
Autor:
Andrew Mounce, R. M. Jock, John M. Anderson, Malcolm S. Carroll, N. Tobias Jacobson, Patrick Harvey-Collard, John King Gamble, Andrew Baczewski, Dan Ward, Ronald P. Manginell, Vanita Srinivasa, Wayne Witzel, Joel R. Wendt, Martin Rudolph, Tammy Pluym
Publikováno v:
Nature Communications
Nature Communications, Vol 9, Iss 1, Pp 1-8 (2018)
Nature Communications, Vol 9, Iss 1, Pp 1-8 (2018)
The silicon metal-oxide-semiconductor (MOS) material system is a technologically important implementation of spin-based quantum information processing. However, the MOS interface is imperfect leading to concerns about 1/f trap noise and variability i
Autor:
Malcolm S. Carroll, G. Ten-Eyck, R. M. Jock, Tammy Pluym, Joel R. Wendt, T. Jacobson, Patrick Harvey-Collard, Ronald P. Manginell, Michael Lilly, Jason Dominguez, Martin Rudolph
Publikováno v:
2016 IEEE International Electron Devices Meeting (IEDM).
Si-MOS based QD qubits are attractive due to their similarity to the current semiconductor industry. We introduce a highly tunable MOS foundry compatible qubit design that couples an electrostatic quantum dot (QD) with an implanted donor. We show for
Publikováno v:
ECS Transactions. 50:647-654
While Si and Si-based materials have dominated classical electronic device technology for 50 years, quantum information processing requires very different types of devices. Silicon has also been found to be an ideal host for long-coherence quantum bi
Autor:
Rachel Goldman, Cagliyan Kurdak, T. Dannecker, R. M. Jock, M. Reason, Y. Jin, H. Cheng, James L. Merz, Y. He, Alexander Mintairov
We have investigated the influence of Si-N complexes on the electronic properties of GaAsN alloys. The presence of Si-N complexes is suggested by a decrease in carrier concentration, n, with increasing N-composition, observed in GaAsN: Si films but n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a1daba9db2346bb115136a5d403d29c6
https://hdl.handle.net/10468/4354
https://hdl.handle.net/10468/4354
Autor:
R. M. Jock, Jianhua He, Shyam Shankar, Kevin H. Eng, Stephen Aplin Lyon, Lisa A Tracy, Malcolm S. Carroll, Kenton D. Childs, A. M. Tyryshkin, Michael Lilly
Publikováno v:
Applied Physics Letters. 100:023503
We present an electron spin resonance (ESR) approach to characterize shallow electron trapping in band-tail states at Si/SiO2 interfaces in metal-oxide-semiconductor (MOS) devices and demonstrate it on two MOS devices fabricated at different laborato
Autor:
H. Cheng, Y. Jin, R. M. Jock, James L. Merz, Rachel Goldman, Cagliyan Kurdak, Y. He, Yanbin Wang, A. M. Mintarov
Publikováno v:
Applied Physics Letters. 95:062109
We have used rapid thermal annealing to investigate the influence of N interstitials on the electronic properties of GaAsN alloys. Nuclear reaction analysis reveals an annealing-induced decrease in the interstitial N concentration, while the total N