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pro vyhledávání: '"R. M. Cohen"'
The COVID-19 pandemic has increased negative emotions and decreased positive emotions globally. Left unchecked, these emotional changes might have a wide array of adverse impacts. To reduce negative emotions and increase positive emotions, we tested
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______2127::201fd8bb20b6703a1f42cd1073740f9c
https://pergamos.lib.uoa.gr/uoa/dl/object/uoadl:2982514
https://pergamos.lib.uoa.gr/uoa/dl/object/uoadl:2982514
Autor:
Kathryn Berndtson, Tina Daid, C Shawn Tracy, Anant Bhan, Emma R M Cohen, Ross E G Upshur, Jerome A Singh, Abdallah S Daar, James V Lavery, Peter A Singer
Publikováno v:
PLoS Medicine, Vol 4, Iss 9, p e268 (2007)
Externí odkaz:
https://doaj.org/article/c98c6f4a16844cfaaa33e73b384f84a9
Autor:
Michael C. Y. Chan, David J. H. Cockayne, Chennupati Jagadish, R. M. Cohen, E.H. Li, Michael Gal, Hark Hoe Tan, P. T. Burke, D. Q. Cai, Shu Yuan, Jin Zou, Lap Van Dao, Yong Kim
Enhancement of interdiffusion in GaAs/AlGaAs quantum wells due to anodic oxides was studied. Photoluminescence, transmission electron microscopy, and quantum well modeling were used to understand the effects of intermixing on the quantum well shape.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f6ab575c9fb789c2bbe94f676c58b8f6
https://doi.org/10.1063/1.366830
https://doi.org/10.1063/1.366830
Autor:
Michael Gal, R. M. Cohen, Hark Hoe Tan, Robert N. Lamb, Bin Gong, Chennupati Jagadish, Lan Fu, W. Reichert, Jennifer Wong-Leung, Lap Van Dao, Prakash Deenapanray
Publikováno v:
Journal of Applied Physics. 92:3579-3583
J. Wong-Leung, P. N. K. Deenapanray, and H. H. Tan acknowledge the fellowships awarded by the Australian Research Council.
Autor:
W. Reichert, R. M. Cohen
Publikováno v:
Journal of Crystal Growth. 220:364-378
GaAs was grown on patterned 〈1 0 0〉 on- and off-axis GaAs substrates by organometallic vapor-phase epitaxy (OMVPE). Patterned mesas were observed to change shape because lateral growth rates varied by more than an order of magnitude in different
Autor:
W. Reichert, R. M. Cohen
Publikováno v:
Journal of Electronic Materials. 29:118-128
Organometallic vapor phase epitaxial growth of GaAs on 320 nm high mesas was used to study the dependence of lateral growth upon the substrate misorientation from (100) and the mesa wall orientation on the substrate. GaAs (100) substrates were misori
Autor:
R. M. Cohen, A Tandon
Publikováno v:
Journal of Crystal Growth. 192:47-55
Carbon doped, p-type, In x Ga 1-x As (0.2 < x < 0.65) epilayers have been grown on InP substrates at relatively low temperature (450°C) using atmospheric pressure organometallic vapor-phase epitaxy (APOMVPE). Excellent morphology was obtained in all
Autor:
C.Y. Chen, R. M. Cohen
Publikováno v:
Journal of Crystal Growth. 167:17-23
We have found that the equilibrium Zn solubility limit in GaAs, as set by formation of the second condensed phase, Zn 3 As 2 , exhibits a retrograde behavior over the temperature range 575 ≤ T ≤ 700°C, at constant arsenic partial pressure. The r
Publikováno v:
Diabetes. 45:736-741
Publikováno v:
Journal of Crystal Growth. 156:320-326
We report on the growth of InTlSb at various temperatures by atmospheric pressure organometallic vapor phase epitaxy (OMVPE). Electron microprobe analysis indicates that the Tl solubility is