Zobrazeno 1 - 3
of 3
pro vyhledávání: '"R. M. C. M. van de Sanden"'
Autor:
Miro Zeman, B. Vet, R.A.C.M.M. van Swaaij, Arno H. M. Smets, Marinus Fischer, David C. Bobela, MA Wank, R. M. C. M. van de Sanden, C.R. Wronski
Publikováno v:
IEEE Journal of Photovoltaics, 2(2), 94-98. IEEE Electron Devices Society
The bandgap of hydrogenated amorphous silicon (a-Si:H) is studied using a unique set of a-Si:H films deposited by means of three different processing techniques. Using this large collection of a-Si:H films with a wide variety of nanostructures, it is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fb6cbaad90af00979ef660e6724c9a58
https://doi.org/10.1109/jphotov.2011.2180701
https://doi.org/10.1109/jphotov.2011.2180701
Autor:
W.H.A. Wien, Fred Roozeboom, Harm C. M. Knoops, H.W. van Zeijl, Wilhelmus M. M. Kessels, M. Saadaoui, R. M. C. M. van de Sanden, C. Kwakernaak, F.C. Voogt, H. T. M. Pham, Pasqualina M. Sarro
Publikováno v:
Ieee Transactions on Components Packaging and Manufacturing Technology, 1, 1728-1738
IEEE Transactions on Components, Packaging and Manufacturing Technology, 11, 1, 1728-1738
IEEE Transactions on Components and Packaging Technologies, 1(11), 1728-1738. Institute of Electrical and Electronics Engineers
IEEE Transactions on Components, Packaging and Manufacturing Technology, 11, 1, 1728-1738
IEEE Transactions on Components and Packaging Technologies, 1(11), 1728-1738. Institute of Electrical and Electronics Engineers
One of the critical steps toward producing void-free and uniform bottom-up copper electroplating in high aspect-ratio (AR) through-silicon vias (TSVs) is the ability of the copper electrolyte to spontaneously flow through the entire depth of the via.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::390c5cdce6c7fc5aec9e7e434140c66a
https://doi.org/10.1109/tcpmt.2011.2167969
https://doi.org/10.1109/tcpmt.2011.2167969
Publikováno v:
Chemical Vapor Deposition. 10:20-22
The controlled vaporization and subsequent transport of liquid and solid precursors is an essential part of gas phase process technology. To accurately control precursor feed rate when using conventional bubbler systems, it is imperative to know the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::656213003eaeeddfbe3419e0c69184b0
https://doi.org/10.1002/cvde.200306145
https://doi.org/10.1002/cvde.200306145